The IXTH1N200P3HV follows the standard pin configuration for a TO-247 package: 1. Source (S) 2. Gate (G) 3. Drain (D)
The IXTH1N200P3HV operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the source and drain terminals.
This MOSFET is ideal for use in high voltage power supplies, motor control, and inverters. Its high voltage rating and low on-resistance make it suitable for applications requiring efficient power management and fast switching.
This entry provides comprehensive information about the IXTH1N200P3HV Power MOSFET, including its basic overview, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.
What is IXTH1N200P3HV?
What are the key features of IXTH1N200P3HV?
In what technical solutions can IXTH1N200P3HV be used?
What are the advantages of using IXTH1N200P3HV in technical solutions?
What is the typical operating temperature range for IXTH1N200P3HV?
How does IXTH1N200P3HV compare to other IGBTs in its class?
Are there any application notes or reference designs available for IXTH1N200P3HV?
What considerations should be taken into account when designing with IXTH1N200P3HV?
Can IXTH1N200P3HV be used in parallel configurations for higher current applications?
Where can I find detailed specifications and datasheets for IXTH1N200P3HV?