IXTM11N80

Introduction

The IXTM11N80 is a power MOSFET belonging to the category of electronic components used in power management and control applications. This device offers unique characteristics and features that make it suitable for a wide range of applications.

Basic Information Overview

• Category: Power MOSFET
• Use: Power management and control
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-268
• Essence: Efficient power handling and control
• Packaging/Quantity: Typically available in reels or tubes

Specifications

The IXTM11N80 features a maximum drain-source voltage (VDS) of 800V and a continuous drain current (ID) of 11A. It has a low on-resistance (RDS(on)) of 0.45 ohms and a gate threshold voltage (VGS(th)) of 2.5V.

Detailed Pin Configuration

The IXTM11N80 follows a standard pin configuration for power MOSFETs, with three main pins: gate (G), drain (D), and source (S). The TO-268 package provides easy access to these pins for efficient integration into circuit designs.

Functional Features

• High voltage capability: The IXTM11N80 can handle high voltage levels, making it suitable for power applications.
• Low on-resistance: This MOSFET offers low RDS(on), leading to reduced power dissipation and improved efficiency.
• Fast switching speed: Its fast switching characteristics enable rapid control of power flow in circuits.

Advantages and Disadvantages

Advantages: - Efficient power handling - Low power dissipation - Fast switching speed

Disadvantages: - Sensitivity to static electricity - Gate drive considerations required for optimal performance

Working Principles

The IXTM11N80 operates based on the principles of field-effect transistors, utilizing the control of electric fields within the semiconductor material to regulate the flow of current between the drain and source terminals. By modulating the gate-source voltage, the device can effectively control the power flow in the circuit.

Detailed Application Field Plans

The IXTM11N80 finds extensive use in various power management and control applications, including but not limited to: - Switching power supplies - Motor control - Inverters - LED lighting - Industrial automation

Detailed and Complete Alternative Models

• IXTM10N80: Similar specifications with lower continuous drain current
• IXTM12N80: Similar specifications with higher continuous drain current
• IXTM11N60: Lower maximum drain-source voltage with similar characteristics

In conclusion, the IXTM11N80 power MOSFET offers a compelling solution for power management and control applications, providing high voltage capability, low on-resistance, and fast switching speed. Its versatile nature makes it suitable for diverse industrial and consumer electronics applications.

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