IXTP05N100M

Product Overview

• Category: Power MOSFET
• Use: High-voltage applications
• Characteristics: High power handling, low on-resistance, fast switching speed
• Package: TO-220AB
• Essence: Efficient power management
• Packaging/Quantity: Standard reel packaging, quantity varies by supplier

Specifications

• Voltage Rating: 1000V
• Current Rating: 5A
• On-Resistance: 0.65Ω
• Gate Threshold Voltage: 3V
• Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

1. Source (S)
2. Gate (G)
3. Drain (D)

Functional Features

• Low on-resistance for minimal power loss
• Fast switching speed for efficient operation
• High voltage rating for robust performance in high-power applications

Advantages and Disadvantages

Advantages

• High power handling capability
• Low on-resistance for improved efficiency
• Fast switching speed for responsive operation

Disadvantages

• Higher cost compared to lower voltage MOSFETs
• Requires careful handling due to high voltage rating

Working Principles

The IXTP05N100M operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. When a sufficient voltage is applied to the gate, the MOSFET allows current to flow through, enabling power management in high-voltage circuits.

Detailed Application Field Plans

The IXTP05N100M is suitable for a wide range of high-voltage applications, including: - Switching power supplies - Motor control - Inverters - Industrial equipment

Detailed and Complete Alternative Models

• IXTP01N100D
• IXTP02N100D
• IXTP10N100D

This comprehensive lineup of alternative models provides options with varying specifications to suit different application requirements.

---

This entry provides a detailed overview of the IXTP05N100M, covering its product information, specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.