IXTY1R4N100P
Introduction
The IXTY1R4N100P is a power MOSFET belonging to the category of electronic components. This device is widely used in various applications due to its unique characteristics and functional features. In this entry, we will provide an overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Basic Information Overview
Specifications
The IXTY1R4N100P has the following specifications: - Drain-Source Voltage (VDS): 100V - Continuous Drain Current (ID): 1.4A - On-State Resistance (RDS(on)): 0.65Ω - Gate Threshold Voltage (VGS(th)): 2.5V - Total Gate Charge (Qg): 3.8nC - Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IXTY1R4N100P follows the standard pin configuration for a TO-220AB package: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source
Functional Features
The key functional features of the IXTY1R4N100P include: - High power handling capacity, suitable for power management applications - Low on-state resistance, leading to reduced power losses - Fast switching speed, enabling efficient operation in switching circuits
Advantages and Disadvantages
Advantages: - High power handling capacity - Low on-state resistance - Fast switching speed
Disadvantages: - Sensitive to voltage spikes - Requires careful handling during installation
Working Principles
The IXTY1R4N100P operates based on the principles of field-effect transistors. When a sufficient gate-source voltage is applied, it allows current to flow between the drain and source terminals, effectively controlling the power flow in electronic circuits.
Detailed Application Field Plans
The IXTY1R4N100P finds extensive use in various applications, including: - Switching power supplies - Motor control circuits - LED lighting systems - Audio amplifiers - Battery management systems
Detailed and Complete Alternative Models
Some alternative models to the IXTY1R4N100P include: - IRF540N - FQP30N06L - STP55NF06L - PSMN1R5-30PL
In conclusion, the IXTY1R4N100P is a versatile power MOSFET with high power handling capacity, low on-state resistance, and fast switching speed. Its application spans across diverse electronic circuits, making it a crucial component in modern electronic devices.
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What is IXTY1R4N100P?
What are the key specifications of IXTY1R4N100P?
In what technical solutions can IXTY1R4N100P be used?
What are the advantages of using IXTY1R4N100P in technical solutions?
How does IXTY1R4N100P compare to other MOSFETs in its class?
Are there any application notes or reference designs available for IXTY1R4N100P?
What thermal considerations should be taken into account when using IXTY1R4N100P?
Can IXTY1R4N100P be used in automotive or industrial applications?
What are the recommended operating conditions for IXTY1R4N100P?
Where can I purchase IXTY1R4N100P for my technical solutions?