MAGX-001214-650L00

Introduction

MAGX-001214-650L00 is a high-power GaN-on-SiC HEMT transistor designed for use in various RF power applications. This entry provides an overview of the product, including its category, use, characteristics, package, essence, packaging/quantity, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: RF Power Transistor
• Use: Designed for high-power RF applications
• Characteristics: High efficiency, high gain, and wide bandwidth
• Package: Ceramic/metal flange package
• Essence: Utilizes Gallium Nitride on Silicon Carbide technology for high-performance RF power amplification
• Packaging/Quantity: Available in single-unit packaging

Specifications

• Frequency Range: 1.2 - 1.4 GHz
• Output Power: 650 W
• Gain: 17 dB
• Efficiency: 70%
• Voltage: 50 V
• Current: 30 A
• Thermal Resistance (junction to case): 0.15 °C/W

Detailed Pin Configuration

The MAGX-001214-650L00 features a standard 4-pin configuration: 1. Gate 2. Drain 3. Source 4. Ground

Functional Features

• High power density
• Broadband performance
• High thermal conductivity
• High breakdown voltage
• Low parasitic capacitances

Advantages and Disadvantages

Advantages

• High power output
• Wide operating bandwidth
• Enhanced thermal management
• High reliability
• Compact form factor

Disadvantages

• Higher cost compared to traditional LDMOS transistors
• Sensitive to electrostatic discharge (ESD)

Working Principles

The MAGX-001214-650L00 operates based on the principles of Gallium Nitride High Electron Mobility Transistors (GaN HEMT), utilizing the unique properties of GaN-on-SiC technology to achieve high-power amplification with improved efficiency and linearity.

Detailed Application Field Plans

The MAGX-001214-650L00 is suitable for a wide range of RF power applications, including: - Radar systems - Avionics - Satellite communications - Wireless infrastructure - Industrial, scientific, and medical (ISM) applications

Detailed and Complete Alternative Models

• MAGX-001090-600L00
• MAGX-000912-500L00
• MAGX-000912-100L00
• MAGX-000912-050L00

In conclusion, the MAGX-001214-650L00 is a high-power GaN-on-SiC HEMT transistor offering exceptional performance in RF power applications. Its advanced features and capabilities make it a preferred choice for demanding high-frequency and high-power applications across various industries.

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