MX25L12835FMI-10G

Product Overview

Category

The MX25L12835FMI-10G belongs to the category of non-volatile memory integrated circuits.

Use

This product is primarily used for storing data in electronic devices, such as computers, smartphones, and other consumer electronics.

Characteristics

• Non-volatile: The MX25L12835FMI-10G retains stored data even when power is removed.
• High capacity: With a storage capacity of 128 megabits (16 megabytes), it offers ample space for data storage.
• Fast access time: The product provides quick read and write operations, ensuring efficient data transfer.
• Low power consumption: It is designed to consume minimal power during operation, making it suitable for battery-powered devices.

Package

The MX25L12835FMI-10G is available in a compact and industry-standard package, allowing for easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

The MX25L12835FMI-10G is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Type: Flash
• Memory Size: 128 megabits (16 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The MX25L12835FMI-10G has a total of 8 pins, each serving a specific function:

1. Chip Select (/CS): Enables communication with the device when set to a low logic level.
2. Serial Clock (SCLK): Provides the clock signal for data transfer.
3. Serial Data Input (SI): Receives data from the external device.
4. Serial Data Output (SO): Transmits data to the external device.
5. Hold (/HOLD): Suspends ongoing operations without resetting the device.
6. Write Protect (/WP): Protects the memory from accidental write operations.
7. Ground (GND): Connects to the ground reference of the system.
8. Power Supply (VCC): Provides the operating voltage to the device.

Functional Features

• Fast Read/Write Operations: The MX25L12835FMI-10G offers high-speed data transfer, allowing for efficient read and write operations.
• Sector Erase Capability: It supports sector-based erasure, enabling selective deletion of specific memory sectors.
• Software/Hardware Protection: The device includes features to protect against unauthorized access or accidental modification of stored data.
• Low Power Consumption: The product is designed to minimize power consumption, making it suitable for battery-powered devices.
• High Reliability: With a long data retention period and a high number of erase/program cycles, the MX25L12835FMI-10G ensures reliable performance over an extended lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Compact package size
• Reliable performance

Disadvantages

• Limited erase/program cycles
• Requires additional circuitry for interfacing with the host device

Working Principles

The MX25L12835FMI-10G utilizes flash memory technology to store data. It employs a Serial Peripheral Interface (SPI) for communication with the host device. When powered on, the device can be accessed by sending commands through the SPI interface, allowing for read and write operations. The non-volatile nature of the memory ensures that data is retained even when power is removed.

Detailed Application Field Plans

The MX25L12835FMI-10G finds applications in various electronic devices, including but not limited to: - Computers and laptops - Smartphones and tablets - Digital cameras - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. MX25L12835EMI-10G: Similar to MX25L12835FMI-10G, but with extended temperature range (-40°C to +105°C).
2. MX25L12835DMI-10G: Similar to MX25L12835FMI-10G, but with a smaller package size.
3. MX25L12835GMI-10G: Similar to MX25L12835FMI-10G, but with higher erase/program cycles (up to 1 million cycles).

These alternative models offer similar functionality and can be considered as alternatives based on specific requirements or constraints.

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