MX29GL512FHT2I-11G

Product Overview

Category

MX29GL512FHT2I-11G belongs to the category of flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: MX29GL512FHT2I-11G has a storage capacity of 512 megabits (64 megabytes).
• Fast data transfer rate: It offers high-speed read and write operations, allowing for quick access to stored data.
• Reliable performance: The flash memory chip is designed to provide reliable and consistent performance over an extended period.
• Low power consumption: MX29GL512FHT2I-11G is energy-efficient, making it suitable for battery-powered devices.
• Compact package: The chip is available in a small form factor, enabling its integration into space-constrained electronic devices.

Package and Quantity

MX29GL512FHT2I-11G is typically packaged in a surface-mount package (SOP) with 48 pins. It is commonly sold in reels containing multiple units.

Specifications

• Memory Type: Flash memory
• Capacity: 512 megabits (64 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The detailed pin configuration of MX29GL512FHT2I-11G is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. BYTE#
46. RY/BY#
47. VSS
48. VCC

Functional Features

• Erase and Program Operations: MX29GL512FHT2I-11G supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: It provides the option to lock specific blocks of memory, preventing accidental modification or erasure.
• Read Modes: The chip offers various read modes, including random access, burst mode, and continuous read, catering to different application requirements.
• Error Correction: MX29GL512FHT2I-11G incorporates error correction techniques to enhance data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate ensures quick access to stored information.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into space-constrained electronic devices.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Relatively higher cost per unit of storage compared to alternative memory solutions.

Working Principles

MX29GL512FHT2I-11G utilizes the principles of flash memory technology. It stores data in a series of memory cells, which can be electrically programmed and erased. The chip uses a combination of transistors and floating-gate structures to trap and store electrical charges, representing binary data (0s and 1s). These charges can be manipulated through specific voltage levels to perform read, write, and erase operations.

Detailed Application Field Plans

MX29GL512FHT2I-11G finds applications in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Mobile Devices: Smartphones, tablets, and portable media players benefit from the high storage capacity and fast data access provided by MX29GL512FHT2I-11G.
2. Digital Cameras: The chip enables efficient storage of high-resolution images and videos captured by digital cameras.
3. Automotive Electronics: MX29GL512FHT2I