PL135-47OI-R

Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: TO-92
Essence: Bipolar Junction Transistor (BJT)
Packaging/Quantity: 1000 pieces per reel

Specifications and Parameters

• Collector Current (Ic): 500mA
• Collector-Emitter Voltage (Vce): 45V
• Emitter-Base Voltage (Veb): 6V
• Power Dissipation (Pd): 625mW
• Transition Frequency (ft): 150MHz
• Noise Figure (NF): 2dB
• Gain-Bandwidth Product (fT): 300MHz

Pin Configuration

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Characteristics

• High voltage gain
• Low noise figure
• Fast switching speed
• Wide frequency response
• Good linearity

Advantages

• Suitable for low-power applications
• Compact TO-92 package
• Easy to integrate into circuit designs
• Cost-effective solution

Disadvantages

• Limited power handling capability
• Not suitable for high-current applications
• Sensitive to temperature variations

Applicable Range of Products

• Audio amplifiers
• RF amplifiers
• Oscillators
• Switching circuits
• Sensor interfaces

Working Principles

The PL135-47OI-R is a bipolar junction transistor (BJT) that operates based on the principles of current amplification. It consists of three layers of semiconductor material - the emitter, base, and collector. By controlling the current flowing through the base-emitter junction, the transistor can amplify weak signals or act as a switch in electronic circuits.

Detailed Application Field Plans

1. Audio Amplifier Circuit: Utilize the PL135-47OI-R to amplify audio signals in portable devices, such as smartphones and MP3 players.
2. RF Amplifier Circuit: Incorporate the transistor into radio frequency (RF) amplifiers for wireless communication systems.
3. Oscillator Circuit: Use the PL135-47OI-R in oscillator circuits to generate stable and precise frequencies.
4. Switching Circuit: Employ the transistor as a switch in digital logic circuits or power control applications.
5. Sensor Interface Circuit: Integrate the transistor into sensor interface circuits to amplify weak signals from sensors.

Detailed Alternative Models

1. PL135-47OI-G: Similar specifications but with a different package (SOT-23).
2. PL135-47OI-B: Higher power handling capability but with a larger package (TO-220).
3. PL135-47OI-Y: Lower noise figure but with a reduced gain-bandwidth product.
4. PL135-47OI-N: Improved linearity but with a higher cost.
5. PL135-47OI-W: Enhanced thermal stability but with a lower transition frequency.

5 Common Technical Questions and Answers

1. Q: What is the maximum collector current of the PL135-47OI-R?
   A: The maximum collector current is 500mA.

2. Q: Can I use the PL135-47OI-R in high-frequency applications?
   A: Yes, the transistor has a transition frequency of 150MHz, making it suitable for moderate-frequency applications.

3. Q: Is the PL135-47OI-R compatible with surface mount technology (SMT)?
   A: No, the PL135-47OI-R is available in a through-hole TO-92 package.

4. Q: What is the typical gain of the PL135-47OI-R?
   A: The transistor has a high voltage gain, typically around 100.

5. Q: Can I use the PL135-47OI-R in high-power amplifiers?
   A: No, the PL135-47OI-R is designed for low-power applications and may not handle high currents effectively.

This encyclopedia entry provides an overview of the PL135-47OI-R, including its basic information, specifications, pin configuration, functional characteristics, advantages, disadvantages, applicable range of products, working principles, detailed application field plans, alternative models, and common technical questions and answers.