M28W160CB100N6T TR

Product Overview

Category

M28W160CB100N6T TR belongs to the category of Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: The M28W160CB100N6T TR has a capacity of 16 megabits (2 megabytes).
• Fast read and write speeds: Allows for quick access to stored data.
• Low power consumption: Optimized for energy efficiency.
• Durable design: Resistant to shocks, vibrations, and extreme temperatures.

Package

The M28W160CB100N6T TR comes in a small form factor package, making it suitable for compact electronic devices. It is typically packaged in a surface-mount technology (SMT) package.

Essence

The essence of the M28W160CB100N6T TR is its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

The M28W160CB100N6T TR is usually supplied in reels or trays, depending on the manufacturer's packaging standards. The quantity per reel or tray may vary but is typically around 250 to 500 units.

Specifications

• Memory Type: Flash
• Capacity: 16 Megabits (2 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Pin Count: 48

Detailed Pin Configuration

The M28W160CB100N6T TR has a total of 48 pins. Here is a detailed pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte enable control
8. WP#/ACC: Write protect/acceleration control
9. RY/BY#: Ready/busy output
10. VSS: Ground

(Note: The pin configuration may vary slightly depending on the manufacturer's specifications.)

Functional Features

• High-speed data transfer: The M28W160CB100N6T TR offers fast read and write speeds, allowing for efficient data transfer.
• Reliable data retention: The flash memory technology used in this product ensures long-term data retention without the need for power.
• Easy integration: The parallel interface simplifies the integration of the M28W160CB100N6T TR into various electronic systems.
• Low power consumption: Designed to minimize power consumption, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Non-volatile memory
• Durable design
• Low power consumption

Disadvantages

• Limited rewrite cycles: Flash memory has a finite number of erase/write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

The M28W160CB100N6T TR utilizes flash memory technology, which is based on the principle of storing electrical charges in floating gate transistors. These charges represent binary data (0s and 1s) and can be electrically programmed or erased as needed. When reading data, the stored charges are detected and interpreted as digital information.

Detailed Application Field Plans

The M28W160CB100N6T TR is widely used in various electronic devices and applications, including: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

1. M28W160CT: Similar flash memory with a different package type (TSOP)
2. M28W320CB: Higher capacity flash memory (32 Megabits)
3. M28W640CB: Higher capacity flash memory (64 Megabits)
4. M28W128CB: Higher capacity flash memory (128 Megabits)

(Note: The alternative models listed above are for reference purposes and may vary depending on the manufacturer's product lineup.)

In conclusion, the M28W160CB100N6T TR is a flash memory product that offers high storage capacity, fast read/write speeds, and low power consumption. It is commonly used in various electronic devices and applications, providing reliable data storage and retrieval.