M28W640HST70ZA6F

Product Overview

Category

M28W640HST70ZA6F belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M28W640HST70ZA6F retains stored data even when power is removed.
• High capacity: With a storage capacity of 64 megabits (8 megabytes), it can store a large amount of data.
• Fast access time: The M28W640HST70ZA6F offers quick read and write operations, ensuring efficient data transfer.
• Reliable: It has a high endurance and can withstand numerous read and write cycles without data corruption.
• Low power consumption: This device operates at low power levels, making it suitable for battery-powered devices.

Package and Quantity

The M28W640HST70ZA6F is available in a surface-mount package. The exact package type and quantity may vary depending on the manufacturer and supplier.

Specifications

• Storage Capacity: 64 megabits (8 megabytes)
• Interface: Parallel or Serial
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The M28W640HST70ZA6F has a specific pin configuration that enables its proper functioning. Here is a detailed pinout description:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address inputs for selecting memory locations
4. DQ0-DQ7: Data input/output lines
5. WE#: Write Enable control signal
6. CE#: Chip Enable control signal
7. OE#: Output Enable control signal
8. RP#/BYTE#: Reset/Byte# control signal
9. WP#/ACC: Write Protect/Acceleration control signal
10. RY/BY#: Ready/Busy status output

Functional Features

The M28W640HST70ZA6F offers several functional features that enhance its usability:

• Erase and Program Operations: The device supports sector or chip erase operations, allowing for flexible data modification.
• Protection Mechanisms: It includes hardware and software protection mechanisms to prevent unauthorized access or accidental data modification.
• Burst Mode: The M28W640HST70ZA6F supports burst read operations, enabling faster data transfer rates.
• Embedded Algorithms: The device incorporates various algorithms to ensure reliable data storage and retrieval.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Reliable data retention
• Flexible erase and program operations

Disadvantages

• Limited endurance (up to 100,000 erase/program cycles)
• Requires external control signals for proper operation

Working Principles

The M28W640HST70ZA6F is based on flash memory technology. It utilizes floating-gate transistors to store data in a non-volatile manner. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. This change allows the device to retain the stored information even when power is removed. During read operations, the trapped charges are detected, and the corresponding data is retrieved.

Detailed Application Field Plans

The M28W640HST70ZA6F finds applications in various fields, including: 1. Computer systems: Used for BIOS storage, firmware updates, and data logging. 2. Consumer electronics: Employed in smartphones, tablets, and digital cameras for data storage purposes. 3. Automotive industry: Utilized in car navigation systems, infotainment systems, and engine control units. 4. Industrial automation: Used in programmable logic controllers (PLCs), human-machine interfaces (HMIs), and data loggers.

Detailed and Complete Alternative Models

1. M28W640FSB70ZA6E
2. M28W640FST70ZA6F
3. M28W640HTB70ZA6E
4. M28W640HTT70ZA6F
5. M28W640HVB70ZA6E

These alternative models offer similar specifications and functionality to the M28W640HST70ZA6F, providing users with options based on their specific requirements.

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