M29DW256G7ANF6F TR

Product Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics: High capacity, non-volatile, fast access speed
• Package: Integrated Circuit (IC)
• Essence: Flash memory chip
• Packaging/Quantity: Surface Mount Technology (SMT), Tape and Reel packaging, quantity varies based on customer requirements

Specifications

• Capacity: 256 gigabits (32 gigabytes)
• Interface: Parallel NOR Flash
• Voltage Range: 2.7V - 3.6V
• Access Time: 70 ns (max)
• Operating Temperature Range: -40°C to +85°C
• Package Type: 48-ball VFBGA (Very Fine Pitch Ball Grid Array)

Detailed Pin Configuration

The M29DW256G7ANF6F TR has a 48-ball VFBGA package with the following pin configuration:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. A16 - Address Input
18. A17 - Address Input
19. A18 - Address Input
20. A19 - Address Input
21. A20 - Address Input
22. A21 - Address Input
23. A22 - Address Input
24. A23 - Address Input
25. A24 - Address Input
26. A25 - Address Input
27. A26 - Address Input
28. A27 - Address Input
29. A28 - Address Input
30. A29 - Address Input
31. A30 - Address Input
32. A31 - Address Input
33. DQ0 - Data Input/Output
34. DQ1 - Data Input/Output
35. DQ2 - Data Input/Output
36. DQ3 - Data Input/Output
37. DQ4 - Data Input/Output
38. DQ5 - Data Input/Output
39. DQ6 - Data Input/Output
40. DQ7 - Data Input/Output
41. WE# - Write Enable
42. CE# - Chip Enable
43. OE# - Output Enable
44. RESET# - Reset
45. VCC - Power Supply
46. GND - Ground
47. NC - No Connection
48. NC - No Connection

Functional Features

• High-speed read and write operations
• Sector erase and block erase functions
• Automatic program and erase algorithms
• Hardware data protection features
• Low power consumption in standby mode
• Advanced security features for data protection

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access speed - Non-volatile memory (data retention even without power) - Compact package size - Reliable and durable

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited endurance (limited number of erase/write cycles)

Working Principles

The M29DW256G7ANF6F TR is based on NOR flash memory technology. It stores data using a grid of memory cells, where each cell can store multiple bits of information. The memory cells are organized into sectors and blocks, allowing for efficient read, write, and erase operations. The device utilizes a parallel interface to communicate with the host system, enabling fast data transfer.

Detailed Application Field Plans

The M29DW256G7ANF6F TR is widely used in various electronic devices and systems that require high-capacity non-volatile memory. Some common application fields include:

1. Embedded Systems: Used as storage for firmware, boot code, and configuration data in embedded systems such as microcontrollers, industrial control systems, and automotive electronics.
2. Consumer Electronics: Integrated into smartphones, tablets, digital cameras, and portable media players for storing user data, operating systems, and applications.
3. Networking Equipment: Utilized in routers, switches, and network appliances for storing firmware, configuration settings, and log files.
4. Medical Devices: Incorporated into medical equipment for data logging, patient monitoring, and firmware storage.
5. Automotive Applications: Used in automotive infotainment systems, navigation systems, and instrument clusters for storing maps, multimedia content, and system software.

Detailed and Complete Alternative Models

• M29DW128G7ANF6