M29F200FB55N3E2

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Non-volatile Memory
• Characteristics: High-density, Flash memory
• Package: 48-pin TSOP (Thin Small Outline Package)
• Essence: Stores data even when power is turned off
• Packaging/Quantity: Tray, 250 units per tray

Specifications

• Memory Type: Flash
• Memory Size: 2 Megabits (256 Kilobytes)
• Organization: 256K x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Access Time: 55 ns
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The M29F200FB55N3E2 has a total of 48 pins. The pin configuration is as follows:

1. A16
2. A15
3. A14
4. A13
5. A12
6. A11
7. A10
8. A9
9. A8
10. VSS (Ground)
11. A7
12. A6
13. A5
14. A4
15. A3
16. A2
17. A1
18. A0
19. DQ0
20. DQ1
21. DQ2
22. DQ3
23. DQ4
24. DQ5
25. DQ6
26. DQ7
27. WE# (Write Enable)
28. CE# (Chip Enable)
29. OE# (Output Enable)
30. BYTE#
31. VCC (Power Supply)
32. RP#
33. NC (No Connection)
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Non-volatile memory: Retains data even without power supply
• High-density storage: 2 Megabits of memory capacity
• Flash memory technology: Allows for fast read and write operations
• Low power consumption: Operates within a wide voltage range (2.7V to 3.6V)

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data retention - High-density storage allows for large amounts of data to be stored - Fast read and write operations due to flash memory technology - Wide operating temperature range (-40°C to +85°C) - Low power consumption

Disadvantages: - Relatively slower access time compared to some other memory types - Limited memory size (2 Megabits)

Working Principles

The M29F200FB55N3E2 is based on flash memory technology. It uses floating-gate transistors to store data. When data is written, an electrical charge is trapped in the floating gate, altering the transistor's behavior. This charge can be retained even when power is turned off, making it non-volatile. To read the stored data, the transistor's behavior is analyzed by applying appropriate voltages to the pins.

Detailed Application Field Plans

The M29F200FB55N3E2 is commonly used in various electronic devices that require non-volatile memory, such as: - Embedded systems - Consumer electronics - Automotive applications - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to the M29F200FB55N3E2 include: - M29F200FB55N3 - M29F200FB55N2 - M29F200FB55N1 - M29F200FB55N0

These alternative models may have different specifications, package types, or memory sizes, but they serve a similar purpose of providing non-volatile memory.

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