M29W400FT55N3E - English Editing Encyclopedia Entry

Product Overview

Category

M29W400FT55N3E belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High capacity: Offers a storage capacity of 4 gigabits (512 megabytes).
• Fast read/write speeds: Enables quick access to stored data.
• Low power consumption: Optimized for energy efficiency.
• Durable design: Resistant to shocks, vibrations, and extreme temperatures.

Package

The M29W400FT55N3E flash memory is typically packaged in a compact and lightweight form factor. It is available in surface mount technology (SMT) packages, making it suitable for integration into small-sized electronic devices.

Essence

The essence of M29W400FT55N3E lies in its ability to provide reliable and high-capacity data storage in a compact package, catering to the needs of modern electronic devices.

Packaging/Quantity

This flash memory product is commonly sold in reels or trays, depending on the manufacturer's packaging standards. The quantity per package varies but typically ranges from several hundred to several thousand units.

Specifications

• Manufacturer: XYZ Corporation
• Model: M29W400FT55N3E
• Memory Type: NOR Flash
• Capacity: 4 gigabits (512 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP48
• Data Retention: Up to 20 years
• Endurance: 100,000 program/erase cycles

Detailed Pin Configuration

The M29W400FT55N3E flash memory module features a TSOP48 package with the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. BYTE#
46. RY/BY#
47. RESET#
48. GND

Functional Features

• High-speed data transfer: The M29W400FT55N3E flash memory supports fast read and write operations, allowing for efficient data access.
• Block erase capability: This product enables erasing data in large blocks, enhancing flexibility in managing stored information.
• Hardware protection: It offers various hardware-based protection mechanisms to prevent unauthorized access or accidental modification of data.
• Error correction: Built-in error correction algorithms ensure data integrity during read and write operations.
• Low power consumption: The flash memory module is designed to minimize power consumption, extending the battery life of devices it is used in.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read/write speeds
• Durable design
• Low power consumption
• Error correction capabilities

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance compared to some newer memory types

Working Principles

The M29W400FT55N3E flash memory utilizes NOR flash technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is detected, allowing retrieval of the stored information. The memory cells are organized into blocks, enabling efficient erasure and modification of data.

Detailed Application Field Plans

The M29W400FT55N3E flash memory finds applications in various electronic devices, including: 1. Smartphones and tablets: Provides storage for operating systems, applications, and user data. 2. Digital cameras: Stores photos, videos, and firmware. 3. Portable media players: Enables storage of music, videos, and other