M29W640FT70N6F TR

Product Overview

Category

The M29W640FT70N6F TR belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The M29W640FT70N6F TR retains stored data even when power is removed.
• High capacity: This flash memory device has a storage capacity of 64 megabits (8 megabytes).
• Fast access time: The M29W640FT70N6F TR offers quick read and write operations, ensuring efficient data transfer.
• Low power consumption: It is designed to consume minimal power during operation, making it suitable for battery-powered devices.

Package and Quantity

The M29W640FT70N6F TR is available in a surface-mount package. Each package contains one flash memory device.

Essence

The essence of the M29W640FT70N6F TR lies in its ability to provide reliable and high-capacity data storage in a compact form factor.

Specifications

• Memory Type: Flash
• Capacity: 64 megabits (8 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 nanoseconds
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The M29W640FT70N6F TR has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#: Ready/Busy status
8. RESET#: Reset control
9. WP#: Write protect control
10. VSS: Ground

Functional Features

• Erase and Program Operations: The M29W640FT70N6F TR supports both sector erase and byte program operations, allowing flexible data manipulation.
• Block Locking: It provides the option to lock specific memory blocks, preventing accidental modification or erasure.
• Error Correction Code (ECC): This flash memory device incorporates ECC algorithms to ensure data integrity and reliability.
• Software/Hardware Protection: The M29W640FT70N6F TR offers various protection mechanisms to safeguard stored data from unauthorized access.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Compact form factor
• Reliable data retention

Disadvantages

• Limited write endurance
• Higher cost compared to other memory technologies

Working Principles

The M29W640FT70N6F TR utilizes a floating-gate transistor technology to store data. It employs a combination of electrical charges to represent binary information. During programming, electrons are trapped in the floating gate, altering the transistor's conductive properties. These charges can be erased by applying a high voltage, allowing new data to be written.

Detailed Application Field Plans

The M29W640FT70N6F TR is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Mobile Devices: Smartphones, tablets, and portable media players benefit from the high-capacity storage provided by the M29W640FT70N6F TR.
2. Digital Cameras: This flash memory device enables quick and reliable storage of photos and videos captured by digital cameras.
3. Industrial Control Systems: The M29W640FT70N6F TR finds applications in industrial control systems, where reliable and durable data storage is crucial.
4. Automotive Electronics: It is used in automotive electronics for storing firmware, configuration data, and other critical information.

Detailed and Complete Alternative Models

1. M29W640FT70N6E TR
2. M29W640GT70N6F TR
3. M29W640ET70N6F TR
4. M29W640DT70N6F TR
5. M29W640CT70N6F TR

These alternative models offer similar specifications and functionality to the M29W640FT70N6F TR, providing customers with a range of options for their specific requirements.

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