MT28F008B3VG-9 B TR

Product Overview

Category

MT28F008B3VG-9 B TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The stored data is retained even when power is removed.
• High-speed read and write operations: Allows for quick access to stored data.
• High storage capacity: Offers a large amount of storage space for files and applications.
• Compact size: The small form factor makes it suitable for integration into compact electronic devices.
• Low power consumption: Helps to conserve battery life in portable devices.

Package

MT28F008B3VG-9 B TR is available in a surface-mount package, which allows for easy installation on printed circuit boards (PCBs).

Essence

The essence of this product lies in its ability to provide reliable and high-performance data storage solutions for electronic devices.

Packaging/Quantity

MT28F008B3VG-9 B TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of flash memory chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 8 Megabits (1 Megabyte)
• Organization: 512K words x 16 bits
• Voltage Supply: 2.7V - 3.6V
• Access Time: 90 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The pin configuration of MT28F008B3VG-9 B TR is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data inputs/outputs
4. WE#: Write enable
5. CE#: Chip enable
6. OE#: Output enable
7. RY/BY#: Ready/busy status
8. WP#: Write protect
9. GND: Ground

Functional Features

• Block Erase: Allows for erasing large blocks of data simultaneously, improving efficiency.
• Page Program: Enables fast and efficient programming of individual memory pages.
• Read Operation: Provides quick access to stored data.
• Error Correction Code (ECC): Enhances data reliability by detecting and correcting errors during read operations.

Advantages and Disadvantages

Advantages

• High-speed read and write operations
• Large storage capacity
• Compact size
• Low power consumption
• Reliable data retention

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

MT28F008B3VG-9 B TR utilizes NAND flash memory technology. It stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information using different voltage levels. When data is written, the memory cells are programmed with the desired information. During read operations, the stored data is retrieved by sensing the voltage levels in the memory cells.

Detailed Application Field Plans

MT28F008B3VG-9 B TR finds applications in various electronic devices that require non-volatile data storage. Some specific application fields include: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to MT28F008B3VG-9 B TR include: - MT29F008B3VG-9 B TR - MT28F016B3VG-9 B TR - MT29F016B3VG-9 B TR - MT28F032B3VG-9 B TR

These alternative models offer similar functionality and characteristics, but may differ in terms of capacity and organization.

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