MT28F400B3SG-8 B TR

Product Overview

Category

MT28F400B3SG-8 B TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The stored data is retained even when power is turned off.
• High-speed read and write operations: Allows for quick access to data.
• Compact size: Enables integration into small electronic devices.
• Durable: Resistant to shock, vibration, and extreme temperatures.
• Low power consumption: Increases battery life in portable devices.

Package

MT28F400B3SG-8 B TR is available in a surface-mount package, which facilitates easy installation on printed circuit boards (PCBs).

Essence

The essence of this product lies in its ability to provide reliable and high-performance data storage solutions for a wide range of electronic devices.

Packaging/Quantity

MT28F400B3SG-8 B TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of flash memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 4 Megabits (512 Kilobytes)
• Organization: 512K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. CE: Chip enable
4. OE: Output enable
5. WE: Write enable
6. I/O0-I/O7: Data input/output lines
7. RY/BY: Ready/Busy output
8. WP: Write protect
9. GND: Ground

Functional Features

• Random access: Allows for reading and writing data at any location within the memory.
• Block erase: Enables erasing a large block of data simultaneously, improving efficiency.
• Error correction: Incorporates error correction codes to ensure data integrity.
• Wear leveling: Distributes write operations evenly across memory cells, extending the lifespan of the flash memory.

Advantages and Disadvantages

Advantages

• High-speed data access
• Non-volatile storage
• Compact size
• Durable and reliable
• Low power consumption

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to traditional hard drives

Working Principles

MT28F400B3SG-8 B TR utilizes NAND flash memory technology. It stores data by trapping electric charges in floating gate transistors. When a voltage is applied, the trapped charges can be read or modified, allowing for data storage and retrieval.

Detailed Application Field Plans

MT28F400B3SG-8 B TR finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. MT28F400B3WG-8 B TR
2. MT28F400B3VG-8 B TR
3. MT28F400B3XG-8 B TR
4. MT28F400B3YG-8 B TR
5. MT28F400B3ZG-8 B TR

These alternative models offer similar specifications and functionality, providing options for different design requirements and availability from various manufacturers.

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