MT28F400B3WG-8 BET TR

Product Overview

Category

MT28F400B3WG-8 BET TR belongs to the category of Flash Memory.

Use

This product is commonly used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High-speed read and write operations: Allows for quick access to stored data.
• Large storage capacity: Can store a significant amount of data.
• Compact size: Fits easily into small electronic devices.
• Low power consumption: Helps prolong battery life in portable devices.

Package

MT28F400B3WG-8 BET TR is typically packaged in a small, rectangular integrated circuit (IC) package. The specific package type may vary depending on the manufacturer.

Essence

The essence of MT28F400B3WG-8 BET TR lies in its ability to provide reliable and high-performance data storage in electronic devices.

Packaging/Quantity

This product is usually sold in reels or trays containing multiple units. The exact quantity may vary depending on the supplier.

Specifications

• Memory Type: Flash
• Capacity: 4 Megabits (512 Kilobytes)
• Organization: 512K x 8 bits
• Voltage Supply: 2.7V - 3.6V
• Access Time: 70 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Ready/Busy or Byte/Word select
8. RY/BY#: Ready/Busy output or Byte/Word output
9. VSS: Ground

Functional Features

• Erase and Program Operations: Allows for data modification and storage.
• Block Architecture: Enables efficient management of memory blocks.
• Error Correction Code (ECC): Enhances data reliability by detecting and correcting errors.
• Wear-Leveling Algorithm: Distributes write operations evenly across memory cells, extending the lifespan of the flash memory.

Advantages and Disadvantages

Advantages

• High-speed read and write operations facilitate quick data access.
• Non-volatile nature ensures data retention even during power loss.
• Large storage capacity accommodates a significant amount of data.
• Compact size enables integration into various electronic devices.
• Low power consumption helps conserve battery life.

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles.
• Relatively higher cost compared to other types of memory.
• Susceptible to data corruption in case of power surges or electromagnetic interference.

Working Principles

MT28F400B3WG-8 BET TR utilizes a floating-gate transistor structure to store data. The memory cells consist of transistors that can be electrically programmed and erased. When data is written, charges are trapped in the floating gate, altering the transistor's conductive properties. During reading, the stored charge is detected, allowing retrieval of the stored data.

Detailed Application Field Plans

MT28F400B3WG-8 BET TR finds applications in various electronic devices, including: 1. Smartphones and tablets 2. Digital cameras 3. Portable media players 4. Solid-state drives (SSDs) 5. Embedded systems

Detailed and Complete Alternative Models

1. MT28F400B3WG-8 BET TR - 4 Megabits, Parallel Interface
2. MT28F800B3WG-8 BET TR - 8 Megabits, Parallel Interface
3. MT28F160B3WG-8 BET TR - 16 Megabits, Parallel Interface
4. MT28F320B3WG-8 BET TR - 32 Megabits, Parallel Interface

These alternative models offer varying capacities while maintaining similar characteristics and functionality.

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