MT28F400B3WG-8 T TR

Product Overview

Category

MT28F400B3WG-8 T TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The stored data is retained even when power is turned off.
• High-speed read and write operations: Enables quick access to data.
• Large storage capacity: Provides ample space for storing files and applications.
• Compact size: Allows for integration into small electronic devices.
• Durable and reliable: Resistant to physical damage and can withstand a wide range of environmental conditions.

Package

MT28F400B3WG-8 T TR is available in a compact package that ensures easy installation and integration into electronic devices.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity data storage for electronic devices, enabling efficient and seamless user experiences.

Packaging/Quantity

MT28F400B3WG-8 T TR is typically packaged in reels or trays, depending on the quantity ordered. The exact packaging and quantity may vary based on customer requirements.

Specifications

• Memory Type: Flash
• Capacity: 4GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Access Time: 80ns
• Operating Temperature Range: -40°C to +85°C
• Package/Case: TSOP-48

Detailed Pin Configuration

The detailed pin configuration of MT28F400B3WG-8 T TR is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. BYTE#
35. WE#
36. CE#
37. OE#
38. RE#
39. WP#
40. RY/BY#
41. DQ0
42. DQ1
43. DQ2
44. DQ3
45. DQ4
46. DQ5
47. DQ6
48. DQ7

Functional Features

• Erase and Program Operations: Allows for data modification and storage.
• Block Architecture: Enables efficient management of memory blocks for improved performance.
• Error Correction Code (ECC): Enhances data integrity by detecting and correcting errors.
• Write Protection: Protects stored data from accidental modifications.
• Power Management: Optimizes power consumption for extended battery life.

Advantages and Disadvantages

Advantages

• High-speed read and write operations enable quick access to data.
• Large storage capacity provides ample space for storing files and applications.
• Compact size allows for integration into small electronic devices.
• Durable and reliable, resistant to physical damage and environmental conditions.

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

MT28F400B3WG-8 T TR utilizes a floating-gate transistor technology to store data. It consists of memory cells organized in blocks, which can be erased and programmed electrically. When data is written, charges are trapped in the floating gate, altering the cell's electrical characteristics. During read operations, the stored charges are detected, allowing retrieval of the stored data.

Detailed Application Field Plans

MT28F400B3WG-8 T TR finds applications in various electronic devices, including but not limited to: - Smartphones - Tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT28F400B3WG-8 T TR include: - MT28F400B5WG-6 T TR - MT28F400B1WG-8 T TR - MT28F400B3WG-9 T TR - MT28F400B5WG-7 T TR

These alternative models may have variations in specifications, capacity, or package type,