MT29C1G12MAADAFAKD-6 E IT TR

Product Overview

Category

The MT29C1G12MAADAFAKD-6 E IT TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Non-volatile memory
• Compact size
• Low power consumption

Package

The MT29C1G12MAADAFAKD-6 E IT TR is packaged in a small form factor, typically a surface mount package (SMP).

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

The MT29C1G12MAADAFAKD-6 E IT TR is usually sold in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gb (Gigabit)
• Organization: 1G x 8
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Speed: 6 ns (nanoseconds)

Detailed Pin Configuration

The MT29C1G12MAADAFAKD-6 E IT TR has the following pin configuration:

1. VCC - Power supply voltage
2. A0-A19 - Address inputs
3. DQ0-DQ7 - Data input/output
4. WE# - Write enable
5. CE# - Chip enable
6. RE# - Read enable
7. CLE - Command latch enable
8. ALE - Address latch enable
9. WP# - Write protect
10. R/B# - Ready/busy

Functional Features

• High-speed data transfer
• Error correction capability
• Block erase and program operations
• Wear-leveling algorithm for extended lifespan
• Bad block management

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Non-volatile memory retains data even when power is disconnected
• Compact size allows for integration into various electronic devices
• Low power consumption helps to extend battery life

Disadvantages

• Limited endurance compared to other types of memory
• Higher cost per unit compared to traditional hard drives

Working Principles

The MT29C1G12MAADAFAKD-6 E IT TR utilizes NAND flash technology to store data. It consists of a grid of memory cells, each capable of storing multiple bits of information. These cells are organized into blocks, which can be individually erased or programmed. When data is written, it is stored by charging the floating gate within each cell. To read the data, the charge level of the floating gate is measured.

Detailed Application Field Plans

The MT29C1G12MAADAFAKD-6 E IT TR finds applications in various electronic devices, including: - Solid-state drives (SSDs) - USB flash drives - Memory cards - Embedded systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to the MT29C1G12MAADAFAKD-6 E IT TR include: - MT29C1G12MAADAYH-6 IT TR - MT29C1G12MAADAYH-6 IT:A - MT29C1G12MAADAYH-6 IT:K - MT29C1G12MAADAYH-6 IT:Z

These alternative models may have slightly different specifications or features, but they serve a similar purpose in data storage applications.

Word count: 447 words