MT29E128G08CECDBJ4-6:D

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity
  • Fast access speed
• Package: BGA (Ball Grid Array)
• Essence: NAND Flash Memory
• Packaging/Quantity: Single unit

Specifications

• Model: MT29E128G08CECDBJ4-6:D
• Capacity: 128GB
• Interface: Toggle Mode DDR NAND
• Voltage: 3.3V
• Speed: Up to 400Mbps
• Operating Temperature: -40°C to +85°C
• Endurance: 3000 Program/Erase cycles
• Data Retention: Up to 10 years

Detailed Pin Configuration

The MT29E128G08CECDBJ4-6:D has a total of 48 pins, which are configured as follows:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VCC | Power Supply (3.3V) | | 2 | VCCQ | Power Supply for I/O (3.3V) | | 3 | GND | Ground | | 4 | CE# | Chip Enable | | 5 | CLE | Command Latch Enable | | 6 | ALE | Address Latch Enable | | 7-14 | A[0:7] | Address Inputs | | 15 | RE# | Read Enable | | 16 | WE# | Write Enable | | 17-24 | DQ[0:7] | Data Inputs/Outputs | | 25 | R/B# | Ready/Busy Status | | 26-33 | NC | No Connection | | 34 | WP# | Write Protect | | 35-48 | NC | No Connection |

Functional Features

• Toggle Mode DDR NAND interface for high-speed data transfer
• Error Correction Code (ECC) for data integrity
• Wear-Leveling algorithm to evenly distribute program/erase cycles
• Bad Block Management for efficient memory utilization
• Power-On Auto Boot feature for quick system startup

Advantages and Disadvantages

Advantages

• High storage capacity allows for large data storage requirements
• Fast access speed enables quick data retrieval
• Non-volatile nature ensures data retention even without power
• Toggle Mode DDR interface provides high-speed data transfer

Disadvantages

• Limited endurance with a maximum of 3000 program/erase cycles
• Relatively higher cost compared to other memory technologies
• Requires specialized hardware and software support for optimal performance

Working Principles

The MT29E128G08CECDBJ4-6:D is based on NAND Flash memory technology. It stores data in a series of memory cells organized into blocks and pages. Each memory cell can store multiple bits of information, allowing for high-density data storage. The Toggle Mode DDR interface facilitates fast data transfer between the memory device and the host system.

Detailed Application Field Plans

The MT29E128G08CECDBJ4-6:D is commonly used in various applications, including: 1. Solid-State Drives (SSDs) 2. Embedded Systems 3. Consumer Electronics (e.g., smartphones, tablets) 4. Automotive Infotainment Systems 5. Industrial Control Systems

Detailed and Complete Alternative Models

1. MT29E256G08CMYBD12-6IT
2. MT29F512G08CKCABH7-12IT
3. MT29F1T08EMHAFJ4-6IT
4. MT29F2G08ABAEAWP-ITX:A

These alternative models offer similar functionality and specifications, providing options for different capacity requirements and form factors.

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