MT29E512G08CUCDBJ6-6:D

Product Overview

Category

MT29E512G08CUCDBJ6-6:D belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29E512G08CUCDBJ6-6:D offers a storage capacity of 512 gigabytes (GB), allowing users to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick data read and write operations.
• Reliable performance: The product is designed to provide reliable and consistent performance over an extended period.
• Compact package: MT29E512G08CUCDBJ6-6:D comes in a compact form factor, making it suitable for integration into small-sized electronic devices.
• Low power consumption: This NAND flash memory is energy-efficient, consuming minimal power during operation.

Packaging/Quantity

MT29E512G08CUCDBJ6-6:D is typically packaged in a surface mount technology (SMT) package. It is available in bulk quantities for manufacturers and distributors.

Specifications

• Storage Capacity: 512 GB
• Interface: Universal Flash Storage (UFS)
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -25°C to 85°C
• Data Transfer Rate: Up to 1.2 gigabits per second (Gbps)

Detailed Pin Configuration

The pin configuration of MT29E512G08CUCDBJ6-6:D is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply Voltage | | 2 | VCCQ | Power Supply Voltage for I/O | | 3 | GND | Ground | | 4 | CE# | Chip Enable | | 5 | CLE | Command Latch Enable | | 6 | ALE | Address Latch Enable | | 7-14 | A0-A7 | Address Inputs | | 15-22 | DQ0-DQ7 | Data Inputs/Outputs | | 23 | RE# | Read Enable | | 24 | WE# | Write Enable | | 25 | R/B# | Ready/Busy Status | | 26 | WP# | Write Protect | | 27 | RESET# | Reset |

Functional Features

• Error Correction Code (ECC): MT29E512G08CUCDBJ6-6:D incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear Leveling: The product employs wear leveling techniques to distribute write operations evenly across memory cells, extending the lifespan of the NAND flash memory.
• Bad Block Management: It includes a mechanism to identify and manage defective blocks, preventing data loss and maintaining overall performance.

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick access to stored information.
• Compact package facilitates integration into various electronic devices.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Relatively higher cost compared to lower-capacity NAND flash memory options.
• Limited endurance due to the finite number of program/erase cycles.

Working Principles

MT29E512G08CUCDBJ6-6:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate. Data is read from and written to these cells using voltage levels.

Detailed Application Field Plans

MT29E512G08CUCDBJ6-6:D finds applications in various electronic devices, including: - Smartphones and tablets for data storage and app installation. - Digital cameras for storing high-resolution photos and videos. - Solid-state drives (SSDs) for fast and reliable data storage in computers and servers.

Detailed and Complete Alternative Models

Some alternative models to MT29E512G08CUCDBJ6-6:D include: - MT29E1T08CUCDBJ6-6:D: 1 terabyte (TB) NAND flash memory with similar characteristics. - MT29F256G08CUCDBJ6-6:D: 256 GB NAND flash memory with comparable specifications.

In conclusion, MT29E512G08CUCDBJ6-6:D is a high-capacity NAND flash memory that offers fast data transfer rates, reliability, and compactness. It finds applications in various electronic devices