MT29F128G08AJAAAWP-Z:A TR

Product Overview

Category

MT29F128G08AJAAAWP-Z:A TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08AJAAAWP-Z:A TR offers a storage capacity of 128 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, it enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The NAND flash memory technology used in this product provides excellent reliability and durability, making it suitable for long-term data storage.
• Low power consumption: It consumes minimal power during operation, contributing to energy efficiency in electronic devices.
• Compact package: The MT29F128G08AJAAAWP-Z:A TR is available in a compact package, making it easy to integrate into various electronic devices.

Packaging/Quantity

The MT29F128G08AJAAAWP-Z:A TR is typically packaged in a surface-mount package. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 128 GB
• Interface: NAND Flash
• Package Type: Surface-mount
• Operating Voltage: 3.3V
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT29F128G08AJAAAWP-Z:A TR has a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE# (Chip Enable): Enables or disables the chip
4. RE# (Read Enable): Activates read operation
5. WE# (Write Enable): Activates write operation
6. A0-A18: Address inputs for memory access
7. DQ0-DQ15: Data input/output lines
8. R/B# (Ready/Busy): Indicates the status of the device (ready/busy)
9. CLE (Command Latch Enable): Latches command inputs
10. ALE (Address Latch Enable): Latches address inputs
11. WP#/ACC (Write Protect/Access): Write protection control

Functional Features

The MT29F128G08AJAAAWP-Z:A TR offers several functional features that enhance its performance and usability:

1. Error Correction Code (ECC): It incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
2. Wear-Leveling: This feature evenly distributes write operations across memory blocks, preventing premature wear-out and extending the product's lifespan.
3. Bad Block Management: The NAND flash controller manages bad blocks, isolating them from the user's data storage area to maintain optimal performance.
4. Read Disturb Management: It employs techniques to minimize read disturb effects, which can occur when reading data from neighboring cells.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enables quick read and write operations.
• Reliable performance ensures long-term data retention.
• Low power consumption contributes to energy efficiency.
• Compact package facilitates integration into various electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan in certain applications.
• Susceptible to electrical interference: Like other electronic components, it can be affected by electromagnetic interference, potentially leading to data corruption.

Working Principles

The MT29F128G08AJAAAWP-Z:A TR utilizes NAND flash memory technology. It consists of multiple memory cells organized in a grid-like structure. Each cell stores data by trapping electric charges within a floating gate. The presence or absence of charges determines the binary state (0 or 1) of each memory cell.

During write operations, the controller applies a high voltage to the appropriate memory cells, allowing electrons to tunnel through the insulating layer and into the floating gate. This process alters the charge level, representing the desired data value.

During read operations, the controller applies a lower voltage to the memory cells and measures the resulting current flow. By detecting the current level, it determines the stored data value.

Detailed Application Field Plans

The MT29F128G08AJAAAWP-Z:A TR finds applications in various electronic devices that require high-capacity data storage. Some specific application fields include:

1. Smartphones: Used for storing operating systems, applications, and user data.
2. Tablets: Provides storage for multimedia content, documents, and applications.