MT29F128G08CBECBH6-12M:C TR

Product Overview

Category

MT29F128G08CBECBH6-12M:C TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08CBECBH6-12M:C TR offers a storage capacity of 128 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F128G08CBECBH6-12M:C TR is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: This NAND flash memory is available in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F128G08CBECBH6-12M:C TR is typically packaged in a surface-mount technology (SMT) package. The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 128 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F128G08CBECBH6-12M:C TR has a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ7: Data input/output
8. R/B: Ready/Busy status
9. CLE: Command latch enable
10. ALE: Address latch enable
11. WP: Write protect
12. RST: Reset

Functional Features

The MT29F128G08CBECBH6-12M:C TR offers several functional features that enhance its performance and usability:

• Block Erase: This NAND flash memory supports block erase operations, allowing for efficient management of data blocks.
• Page Program: It enables fast and reliable page program operations, facilitating quick data storage.
• Random Access: The product allows random access to individual memory cells, enabling flexible data retrieval.
• Error Correction Code (ECC): The MT29F128G08CBECBH6-12M:C TR incorporates ECC algorithms to ensure data integrity and minimize errors during read and write operations.
• Wear Leveling: This feature evenly distributes write operations across memory blocks, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity meets the increasing demand for data-intensive applications.
• Fast data transfer rate enhances overall system performance.
• Reliable performance ensures data integrity and durability.
• Low power consumption prolongs battery life in portable devices.
• Compact package allows integration into small-sized electronic devices.

Disadvantages

• Cost: NAND flash memory with larger capacities tends to be more expensive.
• Limited endurance: Despite high endurance, the MT29F128G08CBECBH6-12M:C TR has a finite number of program/erase cycles.

Working Principles

The MT29F128G08CBECBH6-12M:C TR operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells that store data in a non-volatile manner. These memory cells consist of floating-gate transistors that can retain charge even when power is removed. The presence or absence of charge determines the binary state of each memory cell, representing data as 0s and 1s.

During write operations, the MT29F128G08CBECBH6-12M:C TR applies a high voltage to the control gate of the selected memory cells, allowing electrons to tunnel through the insulating layer and become trapped in the floating gate. This process alters the threshold voltage of the transistor, storing the desired data.

During read operations, the MT29F128G08CBECBH6-12M:C TR applies a voltage to the control gate and measures the resulting current flow. By comparing the current with predefined thresholds