MT29F16G08ABACAWP-Z:C

Product Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile memory
  • High capacity (16GB)
  • Low power consumption
  • Fast read/write speeds
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Sold individually

Specifications

• Manufacturer: Micron Technology Inc.
• Model Number: MT29F16G08ABACAWP-Z:C
• Memory Type: NAND Flash
• Capacity: 16GB
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The MT29F16G08ABACAWP-Z:C has a total of 48 pins arranged in a specific configuration. The pinout is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. CE#
19. CLE#
20. ALE#
21. RE#
22. WE#
23. WP#
24. R/B#
25. DQ0
26. DQ1
27. DQ2
28. DQ3
29. DQ4
30. DQ5
31. DQ6
32. DQ7
33. DQS0#
34. DQS1#
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• High-speed data transfer
• Error correction and detection mechanisms
• Block erase and program operations
• Wear-leveling algorithms for extended lifespan
• Power-saving features
• Support for various interfaces and protocols

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Low power consumption - Reliable data retention - Wide operating temperature range

Disadvantages: - Limited endurance (program/erase cycles) - Higher cost compared to other memory technologies

Working Principles

The MT29F16G08ABACAWP-Z:C is based on NAND flash memory technology. It stores data in a series of memory cells organized into blocks. Each cell can store multiple bits of information using a floating-gate transistor structure. The memory cells are arranged in a grid-like structure, allowing for efficient data storage and retrieval.

To write data, the memory cells are programmed by applying appropriate voltage levels to the control pins. Erasing data involves clearing entire blocks of memory. Reading data is achieved by sensing the electrical charge stored in the memory cells.

Detailed Application Field Plans

The MT29F16G08ABACAWP-Z:C is widely used in various electronic devices and systems that require non-volatile data storage. Some common application fields include:

1. Solid-state drives (SSDs)
2. USB flash drives
3. Embedded systems
4. Industrial automation
5. Automotive electronics
6. Consumer electronics (e.g., smartphones, tablets)

Detailed and Complete Alternative Models

1. MT29F16G08ABACAWP-Z:B
2. MT29F16G08ABACAWP-Z:D
3. MT29F16G08ABACAWP-Z:E
4. MT29F16G08ABACAWP-Z:F
5. MT29F16G08ABACAWP-Z:G

These alternative models are similar to the MT29F16G08ABACAWP-Z:C in terms of specifications and functionality but may have slight variations in features or package options.

Note: The content provided above is a sample entry and does not represent actual information about the product MT29F16G08ABACAWP-Z:C.