Micron Technology Inc.
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MT29F16G08CBACBWP-12:C

MT29F16G08CBACBWP-12:C

Basic Information Overview

  • Category: Memory Device
  • Use: Data storage and retrieval
  • Characteristics:
    • Non-volatile
    • High capacity (16GB)
    • Low power consumption
    • Fast data transfer rate
  • Package: BGA (Ball Grid Array)
  • Essence: Flash memory chip
  • Packaging/Quantity: Single chip

Specifications

  • Model: MT29F16G08CBACBWP-12:C
  • Capacity: 16GB
  • Interface: Parallel
  • Voltage: 3.3V
  • Speed: 12ns
  • Organization: 2G x 8
  • Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT29F16G08CBACBWP-12:C has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | A0-A18 | Address inputs | | 19 | DQ0-DQ15 | Data inputs/outputs | | 20 | WE# | Write enable control | | 21 | CE# | Chip enable control | | 22 | RE# | Read enable control | | 23 | CLE | Command latch enable | | 24 | ALE | Address latch enable | | 25 | WP# | Write protect control | | 26 | RY/BY# | Ready/busy status output | | 27 | NC | No connection | | 28 | GND | Ground |

Functional Features

  • High-speed data transfer
  • Reliable data retention
  • Block erase and program operations
  • Error correction code (ECC) support
  • Wear-leveling algorithm for extended lifespan

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast data transfer rate
  • Low power consumption
  • Compact package size
  • Reliable data retention

Disadvantages

  • Limited write endurance
  • Higher cost compared to traditional storage devices

Working Principles

The MT29F16G08CBACBWP-12:C is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density data storage. The chip uses electrical charges to represent binary data, with different charge levels indicating different states.

During read operations, the chip applies voltages to specific cells and measures the resulting current to determine the stored data. Write operations involve applying appropriate voltages to program or erase selected cells.

Detailed Application Field Plans

The MT29F16G08CBACBWP-12:C is widely used in various electronic devices that require non-volatile data storage, such as: - Solid-state drives (SSDs) - USB flash drives - Digital cameras - Mobile phones - Tablets - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to the MT29F16G08CBACBWP-12:C include: - Samsung K9F1G08U0D - Micron MT29F16G08ABACAWP - Toshiba TC58NVG2S0FTA00

These models offer similar capacities, interfaces, and characteristics, providing options for different application requirements.

Word count: 345 words

قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق MT29F16G08CBACBWP-12:C في الحلول التقنية

  1. Question: What is the capacity of the MT29F16G08CBACBWP-12:C memory chip?
    Answer: The MT29F16G08CBACBWP-12:C has a capacity of 16 gigabits (2 gigabytes).

  2. Question: What is the operating voltage range for this memory chip?
    Answer: The operating voltage range for the MT29F16G08CBACBWP-12:C is typically between 2.7V and 3.6V.

  3. Question: What is the maximum clock frequency supported by this memory chip?
    Answer: The MT29F16G08CBACBWP-12:C supports a maximum clock frequency of 100 MHz.

  4. Question: Is this memory chip compatible with both SLC and MLC NAND flash architectures?
    Answer: No, the MT29F16G08CBACBWP-12:C is specifically designed for SLC (Single-Level Cell) NAND flash architecture.

  5. Question: What is the typical page size for programming data into this memory chip?
    Answer: The typical page size for programming data into the MT29F16G08CBACBWP-12:C is 2,112 bytes.

  6. Question: Does this memory chip support hardware data protection features?
    Answer: Yes, the MT29F16G08CBACBWP-12:C supports hardware data protection features like ECC (Error Correction Code) and bad block management.

  7. Question: Can this memory chip be used in automotive applications?
    Answer: Yes, the MT29F16G08CBACBWP-12:C is designed to meet the requirements of automotive applications, including extended temperature ranges and high reliability.

  8. Question: What is the endurance rating of this memory chip?
    Answer: The MT29F16G08CBACBWP-12:C has an endurance rating of 100,000 program/erase cycles per block.

  9. Question: Does this memory chip support wear-leveling algorithms?
    Answer: Yes, the MT29F16G08CBACBWP-12:C supports wear-leveling algorithms to ensure even distribution of program/erase cycles across the memory blocks.

  10. Question: What is the package type for this memory chip?
    Answer: The MT29F16G08CBACBWP-12:C comes in a standard TSOP (Thin Small Outline Package) with a 48-pin configuration.