MT29F16G16ADBCAH4-IT:C

Product Overview

Category

The MT29F16G16ADBCAH4-IT:C belongs to the category of NAND Flash memory products.

Use

It is used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Low power consumption

Package

The MT29F16G16ADBCAH4-IT:C is typically available in a small form factor package suitable for surface mounting on printed circuit boards.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity data storage for electronic devices.

Packaging/Quantity

It is commonly packaged in tape and reel format with varying quantities depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 16 gigabits (2 gigabytes)
• Interface: Parallel NAND
• Voltage Supply: 3.3V
• Operating Temperature: -40°C to 85°C
• Data Transfer Rate: Up to 200 megabytes per second

Detailed Pin Configuration

The detailed pin configuration of the MT29F16G16ADBCAH4-IT:C includes address pins, data input/output pins, control pins, and power supply pins. The specific pinout can be found in the product datasheet provided by the manufacturer.

Functional Features

• Page-based architecture for efficient data programming
• Built-in error correction codes (ECC) for data integrity
• Support for various read and program operations
• Internal data management algorithms for wear leveling and bad block management

Advantages and Disadvantages

Advantages

• High-speed data transfer
• Large storage capacity
• Low power consumption
• Reliable data retention
• Compact form factor

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Susceptible to physical damage from environmental factors

Working Principles

The MT29F16G16ADBCAH4-IT:C operates based on the principles of NAND flash memory technology, where data is stored and retrieved by controlling the flow of electrons within memory cells arranged in a grid-like structure. When data is written or erased, the electrical charge within the memory cells is manipulated to represent the binary information.

Detailed Application Field Plans

The MT29F16G16ADBCAH4-IT:C is widely used in applications requiring high-density data storage, such as: - Mobile devices - Digital cameras - Solid-state drives (SSDs) - Industrial embedded systems - Automotive infotainment systems

Detailed and Complete Alternative Models

Some alternative models to the MT29F16G16ADBCAH4-IT:C include: - Samsung K9K8G08U0D - Micron MT29F16G08ABACAWP - Toshiba TH58NVG6T2HBAFL

In conclusion, the MT29F16G16ADBCAH4-IT:C offers high-speed, reliable data storage in a compact form factor, making it suitable for a wide range of electronic devices and applications.

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