MT29F1G08ABBEAHC-IT:E TR

Product Overview

Category

MT29F1G08ABBEAHC-IT:E TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABBEAHC-IT:E TR offers a storage capacity of 1 gigabit (1 Gb), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product ensures data integrity and reliability through advanced error correction techniques.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F1G08ABBEAHC-IT:E TR comes in a small form factor, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F1G08ABBEAHC-IT:E TR is typically packaged in surface mount technology (SMT) packages, such as ball grid array (BGA) or thin small outline package (TSOP). The exact packaging and quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Storage Capacity: 1 Gb
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA or TSOP
• Data Transfer Rate: Up to 400 Mbps (megabits per second)
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F1G08ABBEAHC-IT:E TR has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ7: Data input/output
8. R/B: Ready/busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Please refer to the product datasheet for a complete pin configuration diagram.

Functional Features

• Page Program: The MT29F1G08ABBEAHC-IT:E TR supports page programming, allowing data to be written in small increments.
• Block Erase: It enables block erase operations, which can erase a large amount of data simultaneously.
• Random Access: This NAND flash memory allows random access to any location within the memory array, facilitating efficient data retrieval.
• Error Correction: Advanced error correction techniques are implemented to ensure data integrity and reliability.
• Wear Leveling: The product incorporates wear leveling algorithms to distribute write operations evenly across memory cells, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per gigabit compared to alternative memory solutions

Working Principles

The MT29F1G08ABBEAHC-IT:E TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate. To read or write data, specific voltages are applied to the appropriate pins, enabling the manipulation of charge levels within the memory cells.

Detailed Application Field Plans

The MT29F1G08ABBEAHC-IT:E TR is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Utilized for storing high-resolution photos and videos.
3. Solid-state drives (SSDs): Employed as primary storage in computers and laptops, providing fast boot times and data access.

Detailed and Complete Alternative Models

1. MT29F1G08ABBEAHC-IT:E
2. MT29F1G08ABBEAHC-IT:D
3. MT29F1G08ABBEAHC-IT:G
4. MT29F1G08ABBEAHC-IT:H

These alternative models offer similar specifications and functionality to the MT29F1G08ABBEAHC-IT:E TR. However, slight variations may exist in terms of package type, temperature range, or endurance.

In conclusion