MT29F1G16ABBEAH4:E TR

Product Overview

• Category: Memory chip
• Use: Data storage in electronic devices
• Characteristics: High capacity, fast read/write speeds, low power consumption
• Package: Integrated circuit (IC)
• Essence: Non-volatile memory for long-term data retention
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gigabit (1 Gb)
• Organization: 128 Megabytes x 8 bits
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The MT29F1G16ABBEAH4:E TR chip has the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. CE#
19. WE#
20. RE#
21. CLE
22. ALE
23. WP#
24. R/B#
25. DQ0
26. DQ1
27. DQ2
28. DQ3
29. DQ4
30. DQ5
31. DQ6
32. DQ7
33. VSS

Functional Features

• High-speed data transfer with fast read/write operations
• Error correction and detection mechanisms for data integrity
• Block erase and program operations for efficient memory management
• Low power consumption for extended battery life in portable devices
• Hardware protection features like write protection and lock-down options

Advantages and Disadvantages

Advantages: - Large storage capacity for storing a vast amount of data - Fast data access speeds for quick retrieval and processing - Low power consumption for energy-efficient operation - Reliable and durable non-volatile memory technology - Compact package size for easy integration into various electronic devices

Disadvantages: - Limited endurance compared to other memory technologies - Higher cost per unit compared to some alternative memory solutions - Requires specific programming algorithms for optimal performance

Working Principles

The MT29F1G16ABBEAH4:E TR chip utilizes NAND Flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density data storage. The chip uses electrical charges to represent binary data (0s and 1s). When reading or writing data, the chip applies voltage to specific memory cells to retrieve or modify the stored information.

Application Field Plans

The MT29F1G16ABBEAH4:E TR chip finds applications in various electronic devices, including but not limited to:

1. Smartphones and tablets
2. Solid-state drives (SSDs)
3. Digital cameras
4. Portable media players
5. Automotive electronics
6. Industrial control systems
7. Medical devices

Alternative Models

Here are some alternative models that offer similar functionality:

1. MT29F1G08ABADAWP:A TR
2. MT29F1G16ABAEAWP:A TR
3. MT29F1G08ABBEAWP:A TR
4. MT29F1G16ABBDAWP:A TR

These models have comparable specifications and can be considered as alternatives based on specific requirements and availability.

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