MT29F256G08CMCABJ2-10RZ:A

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile memory
  • High capacity (256GB)
  • NAND Flash technology
• Package: BGA (Ball Grid Array)
• Essence: Reliable and high-performance data storage solution
• Packaging/Quantity: Individual units packaged in trays or reels

Specifications

• Model: MT29F256G08CMCABJ2-10RZ:A
• Capacity: 256GB
• Interface: Parallel
• Voltage: 3.3V
• Speed: 10ns
• Organization: 32Gb x 8
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. RE#
31. WE#
32. WP#
33. R/B#
34. CE#
35. BYTE#
36. NC
37. DQ0
38. DQ1
39. DQ2
40. DQ3
41. DQ4
42. DQ5
43. DQ6
44. DQ7
45. VSS

Functional Features

• High-speed data transfer
• Reliable and durable storage solution
• Error correction and detection mechanisms
• Wear-leveling algorithms for extended lifespan
• Block management for efficient data organization

Advantages

• Large storage capacity
• Fast data access and transfer speeds
• Low power consumption
• Compact form factor
• High reliability and durability

Disadvantages

• Relatively higher cost compared to other memory options
• Limited write endurance compared to some other memory technologies

Working Principles

MT29F256G08CMCABJ2-10RZ:A is based on NAND Flash technology, which utilizes a grid of memory cells to store data. It operates by applying voltage to specific memory cells to program or erase them. The stored data can be accessed by reading the voltage levels of the memory cells.

Detailed Application Field Plans

• Data storage devices (e.g., solid-state drives)
• Embedded systems
• Consumer electronics (e.g., smartphones, tablets)
• Industrial applications (e.g., automotive, aerospace)

Detailed and Complete Alternative Models

1. MT29F256G08CMCABJ3-10RZ:A
2. MT29F256G08CMCABJ4-10RZ:A
3. MT29F256G08CMCABJ5-10RZ:A
4. MT29F256G08CMCABJ6-10RZ:A
5. MT29F256G08CMCABJ7-10RZ:A

(Note: The above alternative models are examples and not an exhaustive list.)

This entry provides comprehensive information about the MT29F256G08CMCABJ2-10RZ:A memory device. It covers its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.