MT29F2G08ABAFAH4-ITS:F TR

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity
  • Fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Flash memory
• Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

• Model: MT29F2G08ABAFAH4-ITS:F TR
• Capacity: 2 Gigabytes (GB)
• Interface: Parallel NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Access Time: 25 ns (max)
• Erase/Program Cycles: 100,000 cycles (typical)

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output
5. WE#: Write Enable
6. CE#: Chip Enable
7. RE#: Read Enable
8. R/B#: Ready/Busy status
9. WP#: Write Protect
10. CLE: Command Latch Enable
11. ALE: Address Latch Enable
12. CEB#: Chip Enable (Byte)
13. RB#: Ready/Busy status (Byte)
14. NC: No Connection

Functional Features

• High-speed data transfer
• Reliable data retention
• Block erase and program operations
• Error correction code (ECC) support
• Wear-leveling algorithm for extended lifespan
• Bad block management

Advantages

• Large storage capacity
• Fast read/write speeds
• Low power consumption
• Compact form factor
• High reliability and durability

Disadvantages

• Limited erase/program cycles
• Higher cost compared to other memory technologies
• Susceptible to data loss in case of power failure during write operations

Working Principles

MT29F2G08ABAFAH4-ITS:F TR is based on NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically erased and reprogrammed. The memory cells are organized into blocks, and data can be read or written at the page level. The device utilizes various control signals and algorithms to manage data storage, retrieval, and wear-leveling.

Detailed Application Field Plans

• Consumer electronics: Smartphones, tablets, digital cameras
• Automotive: Infotainment systems, navigation systems
• Industrial: Embedded systems, data loggers
• Networking: Routers, switches, network storage devices

Detailed and Complete Alternative Models

1. MT29F2G08ABAEAWP-IT:E TR
2. MT29F2G08ABAEAH4-IT:E TR
3. MT29F2G08ABAEAWP-IT:D TR
4. MT29F2G08ABAEAH4-IT:D TR
5. MT29F2G08ABAEAWP-IT:K TR

(Note: This list is not exhaustive and may vary based on availability and specific requirements.)

This entry provides an overview of the MT29F2G08ABAFAH4-ITS:F TR memory device, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.