MT29F4G08ABADAWP:D TR

Product Overview

• Category: NAND Flash Memory
• Use: Data storage in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: DFN (Dual Flat No-Lead)
• Essence: Provides reliable and high-performance data storage solution
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 4GB
• Interface: Parallel
• Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200MB/s (Read), Up to 100MB/s (Write)

Pin Configuration

The MT29F4G08ABADAWP:D TR follows a standard pin configuration for NAND flash memory. The detailed pinout is as follows:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. R/B#
8. WP#
9. NC
10. IO0
11. IO1
12. IO2
13. IO3
14. IO4
15. IO5
16. IO6
17. IO7
18. GND

Functional Features

• High-speed data transfer for efficient read/write operations
• Error correction algorithms for enhanced reliability
• Wear-leveling technology to extend the lifespan of the memory
• Bad block management for improved data integrity
• Power-saving features for reduced energy consumption

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast data transfer rates - Non-volatile memory retains data even without power - Reliable and durable - Suitable for various electronic devices

Disadvantages: - Limited write endurance compared to other memory types - Higher cost per gigabyte compared to some alternatives

Working Principles

The MT29F4G08ABADAWP:D TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high storage density. The memory cells are programmed and erased electrically, making it a non-volatile memory solution.

When data is written, the memory controller sends electrical signals to the appropriate memory cells, changing their states to represent the desired data. Reading data involves detecting the electrical state of the memory cells and converting it back into digital information.

Application Field Plans

The MT29F4G08ABADAWP:D TR is widely used in various electronic devices that require reliable and high-capacity data storage. Some application fields include:

1. Smartphones and tablets
2. Solid-state drives (SSDs)
3. Digital cameras
4. Portable media players
5. Automotive infotainment systems
6. Industrial control systems

Alternative Models

• MT29F4G08ABAEAWP:D TR
• MT29F4G08ABACAWP:D TR
• MT29F4G08ABADAWP:D TR2

These alternative models offer similar specifications and functionality, providing customers with options based on their specific requirements.

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