MT29F4G08ABBDAH4-ITX:D TR

Product Overview

Category

MT29F4G08ABBDAH4-ITX:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G08ABBDAH4-ITX:D TR offers a storage capacity of 4 gigabits (Gb), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F4G08ABBDAH4-ITX:D TR is energy-efficient, consuming minimal power during operation, which is crucial for portable devices with limited battery life.

Package and Quantity

The MT29F4G08ABBDAH4-ITX:D TR is available in a compact package, typically a small outline integrated circuit (SOIC). It is commonly sold in reels or trays containing multiple units, with quantities varying based on customer requirements.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F4G08ABBDAH4-ITX:D TR
• Memory Type: NAND Flash
• Storage Capacity: 4 Gb
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: Small Outline Integrated Circuit (SOIC)

Detailed Pin Configuration

The MT29F4G08ABBDAH4-ITX:D TR has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. CLE: Command Latch Enable
5. ALE: Address Latch Enable
6. RE: Read Enable
7. WE: Write Enable
8. R/B: Ready/Busy
9. DQ0-DQ7: Data Input/Output

Functional Features

• Block Erase: The MT29F4G08ABBDAH4-ITX:D TR supports block erase operations, allowing for efficient erasure of large data blocks.
• Page Program: This flash memory enables page program operations, enabling data to be written in small increments, enhancing flexibility and efficiency.
• Error Correction Code (ECC): The product incorporates ECC algorithms to detect and correct errors, ensuring data integrity and reliability.
• Wear Leveling: The NAND flash memory employs wear leveling techniques to distribute write operations evenly across memory cells, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may limit its lifespan in certain applications.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

The MT29F4G08ABBDAH4-ITX:D TR utilizes NAND flash technology, which stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge applied to it. When reading data, the controller sends commands to select the appropriate memory cells and retrieves the stored information. During writing, the controller applies specific voltages to program the cells with new data.

Detailed Application Field Plans

The MT29F4G08ABBDAH4-ITX:D TR is widely used in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

1. MT29F4G08ABADA: Similar specifications and features, but available in a different package type.
2. MT29F4G08ABBEAH4: Higher storage capacity (8 Gb) with similar characteristics and functionality.
3. MT29F4G08ABCEAH4: Lower power consumption variant with comparable specifications.

These alternative models provide customers with options based on their specific requirements and design considerations.

In conclusion, the MT29F4G08ABBDAH4-ITX:D TR is a NAND flash memory product that offers high storage capacity, fast data transfer rate, and reliable performance. It finds applications in various electronic devices and provides advantages such as low power consumption and compact packaging. However, it has