MT29F4G16ABBDAHC-IT:D

Product Overview

Category

MT29F4G16ABBDAHC-IT:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G16ABBDAHC-IT:D offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable and durable performance, making it suitable for long-term data storage.
• Low power consumption: The product is designed to consume minimal power, enhancing the overall energy efficiency of the device it is integrated into.

Package and Quantity

The MT29F4G16ABBDAHC-IT:D is available in a compact package, typically a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is usually supplied in reels or trays, with quantities varying based on customer requirements.

Specifications

• Storage Capacity: 4 Gb
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount Technology (SMT)
• Data Transfer Rate: Up to 400 Mbps

Pin Configuration

The detailed pin configuration of MT29F4G16ABBDAHC-IT:D can be found in the datasheet provided by the manufacturer. It includes pins for power supply, data input/output, control signals, and other necessary connections.

Functional Features

• Page Program Operation: Allows data to be written to the memory in page-sized increments.
• Block Erase Operation: Enables the erasure of data in large blocks, enhancing memory management efficiency.
• Read Operation: Facilitates the retrieval of stored data from the memory.
• Wear-Leveling Algorithm: Distributes write operations evenly across memory blocks, extending the lifespan of the NAND flash memory.

Advantages

• High storage capacity enables ample data storage for various applications.
• Fast data transfer rate ensures quick access to stored information.
• Low power consumption contributes to energy-efficient device operation.
• Reliable performance ensures data integrity and durability.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Susceptible to electrical interference: Extreme voltage fluctuations or electromagnetic interference can potentially corrupt stored data.

Working Principles

The MT29F4G16ABBDAHC-IT:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells store information by trapping electric charges within their floating gates. The presence or absence of these charges represents binary data (0s and 1s). Data is written to and read from the memory using specific voltage levels and control signals.

Application Field Plans

The MT29F4G16ABBDAHC-IT:D finds application in various electronic devices that require non-volatile data storage. Some potential fields where this product can be utilized include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive electronics

Alternative Models

Several alternative models with similar specifications and features are available in the market. Some notable alternatives to MT29F4G16ABBDAHC-IT:D include: - MT29F4G08ABADAWP-IT:D - MT29F4G08ABADAH4-IT:D - MT29F4G08ABADAWP-IT:E

Please note that the availability and specific characteristics of alternative models may vary depending on the manufacturer.

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