MT29F512G08CKCABH7-6R:A

Product Overview

Category

MT29F512G08CKCABH7-6R:A belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F512G08CKCABH7-6R:A offers a storage capacity of 512 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance with low power consumption, making it suitable for battery-powered devices.
• Durable design: The MT29F512G08CKCABH7-6R:A is built to withstand harsh environmental conditions, ensuring data integrity and longevity.

Package and Quantity

The MT29F512G08CKCABH7-6R:A is available in a compact package that conforms to industry standards. It is typically sold in bulk quantities to meet the demands of manufacturers.

Specifications

• Storage Capacity: 512 GB
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: BGA (Ball Grid Array)
• Pin Count: 169

Detailed Pin Configuration

The pin configuration of the MT29F512G08CKCABH7-6R:A is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply Voltage | | 2 | VCCQ | Power Supply Voltage for I/O | | 3 | GND | Ground | | 4 | CE# | Chip Enable | | 5 | RE# | Read Enable | | 6 | WE# | Write Enable | | ... | ... | ... |

Functional Features

• Page Program: The MT29F512G08CKCABH7-6R:A supports fast and efficient page programming, allowing data to be written in small increments.
• Block Erase: This NAND flash memory enables block erase operations, which facilitate the removal of large amounts of data at once.
• Error Correction Code (ECC): ECC algorithms are implemented to ensure data integrity and minimize the impact of potential errors during read and write operations.
• Wear Leveling: The product incorporates wear-leveling techniques to distribute data evenly across memory cells, prolonging the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity meets the demands of modern data-intensive applications.
• Fast data transfer rate enhances overall system performance.
• Reliable performance with low power consumption.
• Durable design ensures data integrity in challenging environments.

Disadvantages

• Relatively higher cost compared to lower-capacity NAND flash memory options.
• Limited compatibility with older devices that do not support high-capacity storage.

Working Principles

The MT29F512G08CKCABH7-6R:A utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells can be electrically programmed and erased, allowing for non-volatile data storage. When data is written, electrical charges are stored in the memory cells, representing binary information. During read operations, these charges are detected and converted back into usable data.

Detailed Application Field Plans

The MT29F512G08CKCABH7-6R:A is widely used in various electronic devices, including: - Smartphones and tablets: Provides ample storage for apps, media files, and user data. - Digital cameras: Enables high-capacity storage for photos and videos. - Solid-state drives (SSDs): Serves as the primary storage medium for fast and reliable data access.

Detailed and Complete Alternative Models

• MT29F256G08CBABA: 256 GB NAND flash memory with similar characteristics and specifications.
• MT29F1T08EMCABH6-6IT: 1 terabyte (TB) NAND flash memory offering higher storage capacity.

In conclusion, the MT29F512G08CKCABH7-6R:A is a high-capacity NAND flash memory product that provides fast and reliable data storage for various electronic devices. Its advanced features and durability make it suitable for applications requiring large amounts of non-volatile memory.

Word count: 550