MT29F512G08CMCABH7-6R:A

Product Overview

Category

MT29F512G08CMCABH7-6R:A belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F512G08CMCABH7-6R:A offers a storage capacity of 512 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, making it suitable for demanding applications.
• Low power consumption: The MT29F512G08CMCABH7-6R:A is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: This NAND flash memory is available in a compact package, making it easy to integrate into various electronic devices.

Packaging/Quantity

The MT29F512G08CMCABH7-6R:A is typically packaged in a small form factor, such as a surface-mount device (SMD) package. The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 512 GB
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: Surface-Mount Device (SMD)
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)

Detailed Pin Configuration

The MT29F512G08CMCABH7-6R:A follows a standard pin configuration for NAND flash memory. The specific pin assignments may vary depending on the package type and manufacturer. Here is a general overview of the pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. CLE: Command latch enable
5. ALE: Address latch enable
6. RE: Read enable
7. WE: Write enable
8. R/B: Ready/Busy status
9. DQ0-DQ7: Data input/output lines
10. WP: Write protect

Functional Features

• High-speed data transfer: The MT29F512G08CMCABH7-6R:A offers fast read and write speeds, allowing for efficient data transfer between the memory and the host device.
• Error correction: This NAND flash memory incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: The product utilizes wear-leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the memory.
• Bad block management: The MT29F512G08CMCABH7-6R:A includes a built-in bad block management system that identifies and manages defective memory blocks, ensuring optimal performance.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Relatively high cost compared to lower-capacity NAND flash memory options
• Limited endurance compared to other types of non-volatile memory

Working Principles

The MT29F512G08CMCABH7-6R:A operates based on the principles of NAND flash memory technology. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data by varying the charge level in a floating gate transistor. The memory cells are accessed through a series of address and control signals, allowing for read and write operations.

Detailed Application Field Plans

The MT29F512G08CMCABH7-6R:A is widely used in various electronic devices that require high-capacity data storage. Some of the key application fields include:

1. Smartphones and tablets: The NAND flash memory provides ample storage space for apps, photos, videos, and other multimedia content.
2. Digital cameras: This product enables photographers to capture and store high-resolution images and videos.
3. Solid-state drives (SSDs): The MT29F512G08CMCABH7-6R:A serves as the primary storage medium in SSDs, offering fast and reliable data access.

Detailed and Complete Alternative Models

• MT29F256G08CMCABH7-6R:A: 256 GB NAND flash memory with similar characteristics and specifications.
• MT29F1T08EMCABH7-6R:A: 1 terabyte (TB) NAND flash