MT29F64G08CBCABH1-12ITZ:A

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity
  • High speed
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: NAND Flash Memory
• Packaging/Quantity: Individual units or reels

Specifications

• Model: MT29F64G08CBCABH1-12ITZ:A
• Capacity: 64GB
• Interface: Toggle Mode 2.0
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Speed: Up to 120MB/s (Read), Up to 60MB/s (Write)

Detailed Pin Configuration

The MT29F64G08CBCABH1-12ITZ:A has a total of 48 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VCC | Power Supply (2.7V - 3.6V) | | 2 | VCCQ | I/O Power Supply (1.7V - 3.6V) | | 3 | GND | Ground | | 4 | RE# | Read Enable | | 5 | WE# | Write Enable | | ... | ... | ... | | 48 | NC | No Connection |

Functional Features

• High-speed data transfer
• Reliable data storage
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan
• Block management for efficient data organization

Advantages

• Large storage capacity
• Fast read and write speeds
• Low power consumption
• Compact package size
• High reliability and durability

Disadvantages

• Limited endurance (limited number of program/erase cycles)
• Higher cost compared to other memory technologies

Working Principles

The MT29F64G08CBCABH1-12ITZ:A is based on NAND flash memory technology. It stores data in a series of memory cells organized into blocks. Each cell can store multiple bits of information using multi-level cell (MLC) technology. The memory cells are arranged in a grid-like structure, allowing for efficient data storage and retrieval.

When data is written to the memory, it is programmed by applying a high voltage to the appropriate memory cells. To read the data, the voltage levels in the cells are measured to determine the stored information. The memory controller manages the reading and writing operations, as well as error correction and wear-leveling algorithms.

Detailed Application Field Plans

The MT29F64G08CBCABH1-12ITZ:A is widely used in various electronic devices that require non-volatile data storage, such as: - Solid-state drives (SSDs) - USB flash drives - Memory cards - Embedded systems - Industrial applications - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to the MT29F64G08CBCABH1-12ITZ:A include: - Samsung K9K8G08U0M - Toshiba TH58NVG7D2FLA89 - Micron MT29F64G08CBABA

These models offer similar specifications and functionality, providing options for different application requirements.

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