MT29F64G08CECCBH1-12Z:C TR

Product Overview

Category

MT29F64G08CECCBH1-12Z:C TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08CECCBH1-12Z:C TR offers a storage capacity of 64 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, making it suitable for demanding applications.
• Low power consumption: The MT29F64G08CECCBH1-12Z:C TR is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: It comes in a small form factor, making it easy to integrate into various electronic devices without occupying much space.

Packaging/Quantity

The MT29F64G08CECCBH1-12Z:C TR is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on the manufacturer's specifications.

Specifications

• Part Number: MT29F64G08CECCBH1-12Z:C TR
• Memory Type: NAND Flash
• Storage Capacity: 64 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Package Dimensions: 12mm x 20mm

Detailed Pin Configuration

The MT29F64G08CECCBH1-12Z:C TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. VCCQ
3. GND
4. CE#
5. RE#
6. WE#
7. CLE
8. ALE
9. WP#
10. R/B#
11. DQ0
12. DQ1
13. DQ2
14. DQ3
15. DQ4
16. DQ5
17. DQ6
18. DQ7
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page Program Operation: The MT29F64G08CECCBH1-12Z:C TR supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: It enables the erasure of entire blocks of data, providing flexibility in managing storage space.
• Read and Write Protection: This NAND flash memory offers read and write protection features to prevent unauthorized access or modification of stored data.
• Error Correction Code (ECC): The product incorporates ECC algorithms to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity enables the storage of large amounts of data.
• Fast data transfer rate ensures efficient data processing.
• Reliable performance for demanding applications.
• Low power consumption helps prolong battery life in portable devices.
• Compact package allows for easy integration into various electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

The MT29F64G08CECCBH1-12Z:C TR utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is measured, allowing retrieval of the stored information. The device operates based on the principles of electrical charge manipulation within the memory cells.

Detailed Application Field Plans

The MT29F64G08CECCBH1-12Z:C TR finds application in various electronic devices that require high-capacity and reliable data storage. Some potential application fields include:

1. Smartphones and tablets: Used for storing operating systems