MT29F64G08CFACAWP:C TR

Product Overview

Category

MT29F64G08CFACAWP:C TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08CFACAWP:C TR offers a storage capacity of 64 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable performance with low power consumption.
• Durable design: It is designed to withstand shock, vibration, and extreme temperature conditions.
• Compact package: The MT29F64G08CFACAWP:C TR comes in a compact form factor, making it suitable for space-constrained devices.

Package and Quantity

The MT29F64G08CFACAWP:C TR is available in a surface-mount package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 64 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)

Detailed Pin Configuration

The pin configuration of MT29F64G08CFACAWP:C TR is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. RE: Read Enable
5. WE: Write Enable
6. A0-A18: Address Inputs
7. DQ0-DQ7: Data Input/Output
8. R/B: Ready/Busy
9. CLE: Command Latch Enable
10. ALE: Address Latch Enable

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of data at the block level, improving efficiency.
• Random Access: Provides fast random access to stored data.
• Wear-Leveling: Distributes write operations evenly across memory cells, extending the lifespan of the NAND flash memory.
• Error Correction Code (ECC): Implements ECC algorithms to detect and correct errors during data read/write operations.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate ensures quick access to stored information.
• Durable design makes it suitable for rugged environments.
• Low power consumption enhances battery life in portable devices.
• Compact form factor enables integration into space-constrained devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

The MT29F64G08CFACAWP:C TR utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is measured to determine the binary value. The device uses a combination of transistors and logic circuits to control the flow of data and perform various operations such as programming, erasing, and reading.

Detailed Application Field Plans

The MT29F64G08CFACAWP:C TR finds applications in a wide range of electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

1. MT29F64G08CBAAAWP:C TR
2. MT29F64G08CBACAWP:C TR
3. MT29F64G08CBBCAWP:C TR
4. MT29F64G08CBCAWP:C TR
5. MT29F64G08CBDAWP:C TR

These alternative models offer similar specifications and functionality to the MT29F64G08CFACAWP:C TR, providing options for different application requirements.

Note: The content provided above is a sample entry and may not reflect actual product information.