MT46V128M4BN-75:D TR

Product Overview

Category

The MT46V128M4BN-75:D TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data during operation.

Characteristics

• High-speed data access
• Non-volatile memory
• Low power consumption
• Compact size

Package

The MT46V128M4BN-75:D TR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and reliable data storage and retrieval in electronic devices.

Packaging/Quantity

The MT46V128M4BN-75:D TR is typically packaged in trays or reels and is available in various quantities depending on customer requirements.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 128 Megabits (16 Megabytes)
• Organization: 4 banks x 4,194,304 words x 4 bits
• Operating Voltage: 2.5V ± 0.2V
• Speed: 75 nanoseconds (ns)
• Interface: Parallel
• Pin Count: 66 pins
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. WE#
37. CAS#
38. RAS#
39. CKE
40. CS#
41. BA0
42. BA1
43. VDD
44. CLK
45. DQM0
46. DQM1
47. VSS
48. NC
49. NC
50. VDD
51. VDD
52. VSS
53. VSS
54. VSS
55. VSS
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS
61. VSS
62. VSS
63. VSS
64. VSS
65. VSS
66. VSS

Functional Features

• High-speed data access: The MT46V128M4BN-75:D TR offers fast data retrieval, enabling efficient operation of electronic devices.
• Non-volatile memory: The stored data remains intact even when power is disconnected, ensuring data persistence.
• Low power consumption: This product is designed to consume minimal power, enhancing the overall energy efficiency of electronic devices.
• Compact size: The small form factor of the MT46V128M4BN-75:D TR allows for easy integration into various electronic devices.

Advantages and Disadvantages

Advantages

• Fast data access speeds
• Reliable performance
• Low power consumption
• Compact size

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit of storage compared to alternative memory options

Working Principles

The MT46V128M4BN-75:D TR operates based on the principles of dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. To read or write data, the memory controller sends signals to the appropriate row and column addresses, activating the corresponding capacitors.

Detailed Application Field Plans

The MT46V128M4BN-75:D TR is widely used in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

1. MT46V64M8P-6T IT: 64 Megabit (8 Megabyte) DDR SDRAM, operating at 6 nanoseconds.
2. MT47H32M16HR-25E: 512 Megabit (64 Megabyte) DDR2 SDRAM, operating