MT46V16M16FG-6:F TR

Product Overview

Category

MT46V16M16FG-6:F TR belongs to the category of dynamic random-access memory (DRAM) products.

Use

This product is primarily used for storing and retrieving digital information in various electronic devices such as computers, smartphones, tablets, and gaming consoles.

Characteristics

• High-speed data access
• Non-volatile storage
• Low power consumption
• Compact size
• Wide temperature range operation

Package

MT46V16M16FG-6:F TR is available in a small form factor package, making it suitable for space-constrained applications.

Essence

The essence of this product lies in its ability to provide fast and reliable data storage and retrieval capabilities, essential for efficient functioning of electronic devices.

Packaging/Quantity

MT46V16M16FG-6:F TR is typically packaged in trays or reels, with each package containing a specific quantity of memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 1 Gigabit (16 Megabytes)
• Organization: 16M words x 16 bits
• Speed: 6 nanoseconds (166 MHz)
• Voltage: 1.5 volts
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT46V16M16FG-6:F TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. A0
20. A1
21. A2
22. A3
23. A4
24. A5
25. A6
26. A7
27. A8
28. A9
29. A10
30. A11
31. A12
32. A13
33. A14
34. A15
35. BA0
36. BA1
37. RAS#
38. CAS#
39. WE#
40. CK

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable read and write latency settings
• Error correction code (ECC) support for data integrity

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Low power consumption
• Compact size
• Wide temperature range operation
• Error correction capabilities for enhanced reliability

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited capacity compared to other storage options

Working Principles

MT46V16M16FG-6:F TR operates based on the principles of dynamic random-access memory. It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The stored information is refreshed periodically to maintain its integrity.

Detailed Application Field Plans

MT46V16M16FG-6:F TR finds applications in various electronic devices that require fast and reliable data storage and retrieval capabilities. Some of the common application fields include:

1. Personal computers
2. Laptops and notebooks
3. Servers and data centers
4. Mobile phones and tablets
5. Gaming consoles
6. Automotive electronics
7. Industrial control systems

Detailed and Complete Alternative Models

1. MT46V32M16P-5B:F TR
2. MT47H64M16HR-25E:H TR
3. MT41K256M16TW-107:P TR
4. MT48LC8M16A2P-75:C TR
5. MT42L128M32D1KL-18 WT:A TR

These alternative models offer similar functionality and characteristics to MT46V16M16FG-6:F TR, providing options for different capacity requirements or specific application needs.

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