MT46V32M16FN-5B:F

Product Overview

Category

The MT46V32M16FN-5B:F belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compatible with various electronic devices

Package

The MT46V32M16FN-5B:F is available in a compact and standardized package, making it easy to integrate into electronic circuit boards.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval, enhancing the overall performance of electronic devices.

Packaging/Quantity

The MT46V32M16FN-5B:F is typically packaged in trays or reels, containing a specific quantity of chips per package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Model: MT46V32M16FN-5B:F
• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 32 Meg x 16
• Speed: 5B (Clock Frequency: 400 MHz)
• Operating Voltage: 3.3V
• Interface: Parallel
• Package Type: Fine-pitch Ball Grid Array (FBGA)
• Pin Count: 60 pins
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT46V32M16FN-5B:F has a total of 60 pins arranged in a specific configuration. The pinout diagram below illustrates the detailed pin configuration:

1. VDD
2. VDDQ
3. DQ0
4. DQ1
5. DQ2
6. DQ3
7. DQ4
8. DQ5
9. DQ6
10. DQ7
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. A0
20. A1
21. A2
22. A3
23. A4
24. A5
25. A6
26. A7
27. A8
28. A9
29. A10
30. A11
31. A12
32. A13
33. A14
34. A15
35. A16
36. A17
37. A18
38. A19
39. A20
40. BA0
41. BA1
42. RAS#
43. CAS#
44. WE#
45. CKE
46. CS#
47. DM0
48. DM1
49. DM2
50. DM3
51. VREF
52. VSS
53. VSSQ
54. NC
55. NC
56. NC
57. NC
58. NC
59. NC
60. VSS

Functional Features

• High-speed data transfer rate
• Low power consumption
• Self-refresh capability for power-saving mode
• Burst mode operation for efficient data access
• On-die termination (ODT) for improved signal integrity
• Auto precharge and auto refresh functions

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Compatible with various electronic devices
• Efficient power consumption
• Enhanced signal integrity with on-die termination

Disadvantages

• Volatile memory requires constant power supply
• Relatively higher cost compared to other memory technologies
• Susceptible to data loss in case of power failure

Working Principles

The MT46V32M16FN-5B:F operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain the stored information. The data is accessed by sending appropriate signals to the specific memory address.

Detailed Application Field Plans

The MT46V32M16FN-5B:F finds extensive application in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Its high-speed data access and large storage capacity make it suitable for applications that require quick and efficient data processing.

Detailed and Complete Alternative Models

• MT46V32M16TG-75:G
• MT46V32M16P-6