MT47H128M8JN-3 IT:H

Product Overview

Category

The MT47H128M8JN-3 IT:H belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact package size
• Wide operating temperature range
• Reliable performance

Package

The MT47H128M8JN-3 IT:H is packaged in a small form factor integrated circuit (IC) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval functions in electronic devices.

Packaging/Quantity

The MT47H128M8JN-3 IT:H is typically sold in reels or trays containing multiple units. The exact quantity may vary depending on the supplier.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 128 Megabits (16 Megabytes)
• Organization: 128 Megabit x 8
• Speed: 3 nanoseconds (ns)
• Voltage Supply: 2.5 Volts (V)
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: 60-ball FBGA (Fine-Pitch Ball Grid Array)

Detailed Pin Configuration

The MT47H128M8JN-3 IT:H has a total of 60 pins arranged in a fine-pitch ball grid array configuration. The pinout diagram and detailed pin descriptions can be found in the product datasheet.

Functional Features

• Fast data access and transfer speeds
• Low power consumption
• Self-refresh capability for power-saving mode
• Auto-refresh function to maintain data integrity
• On-die termination for improved signal integrity

Advantages and Disadvantages

Advantages

• High-speed data storage and retrieval
• Low power consumption
• Compact package size
• Wide operating temperature range
• Reliable performance

Disadvantages

• Limited capacity compared to other memory technologies
• Higher cost per unit compared to some alternative models

Working Principles

The MT47H128M8JN-3 IT:H operates based on the principles of dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The stored data needs to be periodically refreshed to maintain its integrity.

Detailed Application Field Plans

The MT47H128M8JN-3 IT:H is widely used in various electronic devices that require fast and efficient data storage and retrieval. Some common application fields include:

1. Personal Computers (PCs)
2. Laptops and Notebooks
3. Servers and Data Centers
4. Mobile Phones and Tablets
5. Gaming Consoles
6. Automotive Electronics
7. Industrial Control Systems

Detailed and Complete Alternative Models

1. MT47H64M16HR-25E: 64 Megabit x 16, DDR2 SDRAM, 2.5V, 400 MHz
2. MT47H256M8EB-25E: 256 Megabit x 8, DDR2 SDRAM, 2.5V, 400 MHz
3. MT47H512M16HR-25E: 512 Megabit x 16, DDR2 SDRAM, 2.5V, 400 MHz
4. MT47H1G8M16HR-25E: 1 Gigabit x 16, DDR2 SDRAM, 2.5V, 400 MHz

These alternative models offer different capacities and configurations to suit various memory requirements.

Note: The above information is based on the specifications available at the time of writing. Please refer to the product datasheet for the most accurate and up-to-date information.

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