Micron Technology Inc.
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MT47H256M8EB-25E:C
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MT47H256M8EB-25E:C

Product Overview

Category

MT47H256M8EB-25E:C belongs to the category of dynamic random-access memory (DRAM) chips.

Use

This product is primarily used in computer systems, servers, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

  • High-density storage capacity
  • Fast data access and transfer rates
  • Low power consumption
  • Reliable performance
  • Compatibility with various platforms and architectures

Package

MT47H256M8EB-25E:C is available in a compact and standardized package, designed for easy integration into circuit boards.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and efficiently, enabling smooth operation of electronic devices.

Packaging/Quantity

MT47H256M8EB-25E:C is typically packaged in trays or reels, with each package containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

  • Memory Type: DDR3 SDRAM
  • Capacity: 256 Megabits (32 Megabytes)
  • Organization: 256M x 8 bits
  • Speed Grade: 25E
  • Operating Voltage: 1.5V
  • Clock Frequency: Up to 800 MHz
  • Data Transfer Rate: Up to 1600 Mbps
  • Refresh Cycle Time: 7.8 µs (64 ms refresh interval)

Detailed Pin Configuration

The MT47H256M8EB-25E:C chip has a total of 78 pins, which are arranged as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. NC
  21. A0
  22. A1
  23. A2
  24. A3
  25. A4
  26. A5
  27. A6
  28. A7
  29. VSS
  30. A8
  31. A9
  32. A10
  33. A11
  34. A12
  35. A13
  36. A14
  37. A15
  38. VSS
  39. BA0
  40. BA1
  41. RAS#
  42. CAS#
  43. WE#
  44. CS#
  45. VSS
  46. DM0
  47. DM1
  48. VSS
  49. DQS0#
  50. DQS0
  51. VSS
  52. DQS1#
  53. DQS1
  54. VSS
  55. DQS2#
  56. DQS2
  57. VSS
  58. DQS3#
  59. DQS3
  60. VSS
  61. DQSN0
  62. DQSN1
  63. VSS
  64. DQSN2
  65. DQSN3
  66. VSS
  67. DQSP0
  68. DQSP1
  69. VSS
  70. DQSP2
  71. DQSP3
  72. VSS
  73. VREF
  74. VDD
  75. VDD
  76. VSS
  77. VSS
  78. VSS

Functional Features

  • High-speed data access and transfer
  • Support for burst mode operations
  • On-die termination (ODT) for improved signal integrity
  • Auto-refresh and self-refresh modes for power-saving
  • Error correction code (ECC) support for data integrity

Advantages and Disadvantages

Advantages

  • High-density storage capacity allows for efficient data handling
  • Fast data access and transfer rates enhance system performance
  • Low power consumption contributes to energy efficiency
  • Reliable performance ensures stable operation of electronic devices
  • Compatibility with various platforms and architectures offers flexibility in design and integration

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited scalability beyond a certain capacity
  • Susceptible to data loss in case of power failure without proper backup measures

Working Principles

MT47H256M8EB-25E:C operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When data needs to be accessed or written, the appropriate row and column addresses are provided, allowing the memory controller to retrieve or modify

قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق MT47H256M8EB-25E:C في الحلول التقنية

Sure! Here are 10 common questions and answers related to the application of MT47H256M8EB-25E:C in technical solutions:

  1. Question: What is the capacity of the MT47H256M8EB-25E:C memory module?
    Answer: The MT47H256M8EB-25E:C has a capacity of 256 megabits (32 megabytes).

  2. Question: What is the operating voltage range for this memory module?
    Answer: The operating voltage range for the MT47H256M8EB-25E:C is 2.5V to 2.75V.

  3. Question: What is the maximum clock frequency supported by this memory module?
    Answer: The MT47H256M8EB-25E:C supports a maximum clock frequency of 400 MHz.

  4. Question: Is this memory module compatible with DDR3 technology?
    Answer: Yes, the MT47H256M8EB-25E:C is a DDR3 SDRAM memory module.

  5. Question: Can I use this memory module in a laptop or desktop computer?
    Answer: Yes, the MT47H256M8EB-25E:C can be used in both laptops and desktop computers that support DDR3 memory.

  6. Question: What is the CAS latency of this memory module?
    Answer: The CAS latency of the MT47H256M8EB-25E:C is 9 cycles.

  7. Question: Does this memory module support ECC (Error Correction Code)?
    Answer: No, the MT47H256M8EB-25E:C does not support ECC.

  8. Question: Can I use multiple MT47H256M8EB-25E:C modules together for increased memory capacity?
    Answer: Yes, you can use multiple modules together to increase the overall memory capacity of your system.

  9. Question: What is the form factor of this memory module?
    Answer: The MT47H256M8EB-25E:C has a 78-ball FBGA (Fine-Pitch Ball Grid Array) form factor.

  10. Question: Is this memory module suitable for high-performance applications?
    Answer: Yes, the MT47H256M8EB-25E:C is designed for high-performance computing and can be used in various technical solutions.

Please note that these answers are based on general information about the MT47H256M8EB-25E:C memory module. For specific technical details and compatibility, it's always recommended to refer to the manufacturer's documentation or consult with an expert.