MT47H32M16BT-3:A TR

Basic Information Overview

Category: Memory Module
Use: Data storage and retrieval
Characteristics: High-speed, high-density, non-volatile
Package: BGA (Ball Grid Array)
Essence: Dynamic Random Access Memory (DRAM)
Packaging/Quantity: Tape and Reel, 250 units per reel

Specifications

• Organization: 32M words x 16 bits
• Voltage Supply: 1.35V
• Speed Grade: DDR3L-1600
• Operating Temperature Range: -40°C to +85°C
• Refresh Mode: Auto Refresh and Self Refresh
• Burst Length: 8
• CAS Latency: 11
• Interface: Double Data Rate (DDR)

Detailed Pin Configuration

The MT47H32M16BT-3:A TR memory module has a total of 96 pins arranged in a specific configuration. The pinout is as follows:

1. VSS
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VDD
11. VSS
12. DQ8
13. DQ9
14. DQ10
15. DQ11
16. DQ12
17. DQ13
18. DQ14
19. DQ15
20. VDD
21. VSS
22. A0
23. A1
24. A2
25. A3
26. A4
27. A5
28. A6
29. A7
30. VDD
31. VSS
32. A8
33. A9
34. A10
35. A11
36. A12
37. A13
38. A14
39. A15
40. VDD
41. VSS
42. BA0
43. BA1
44. RAS#
45. CAS#
46. WE#
47. CS#
48. VDD
49. VSS
50. DQS0
51. DQS#0
52. DM0
53. VREFCA
54. VDD
55. VSS
56. DQ16
57. DQ17
58. DQ18
59. DQ19
60. DQ20
61. DQ21
62. DQ22
63. DQ23
64. VDD
65. VSS
66. DQ24
67. DQ25
68. DQ26
69. DQ27
70. DQ28
71. DQ29
72. DQ30
73. DQ31
74. VDD
75. VSS
76. DQS1
77. DQS#1
78. DM1
79. VREFDQ
80. VDD
81. VSS
82. DQ32
83. DQ33
84. DQ34
85. DQ35
86. DQ36
87. DQ37
88. DQ38
89. DQ39
90. VDD
91. VSS
92. DQ40
93. DQ41
94. DQ42
95. DQ43
96. VSS

Functional Features

The MT47H32M16BT-3:A TR memory module offers the following functional features:

1. High-speed data transfer with DDR3L-1600 speed grade.
2. High-density storage capacity of 32M words x 16 bits.
3. Low voltage operation at 1.35V, reducing power consumption.
4. Auto Refresh and Self Refresh modes for efficient memory management.
5. BGA package ensures reliable electrical connections and compact form factor.

Advantages and Disadvantages

Advantages: - High-speed data transfer enables faster processing. - Large storage capacity accommodates extensive data requirements. - Low voltage operation reduces power consumption. - Auto Refresh and Self Refresh modes optimize memory management. - BGA package ensures reliable electrical connections.

Disadvantages: - Limited compatibility with older systems that do not support DDR3L-1600. - Higher cost compared to lower density memory modules. - Sensitive to electrostatic discharge (ESD) during handling.

Working Principles

The MT47H32M16BT-3:A TR memory module is based on the working principles of Dynamic Random Access Memory (DRAM). It stores data in a matrix of capacitors, where each capacitor represents a memory cell. The stored information is refreshed periodically