MT47H512M8WTR-3:C

Product Overview

Category

MT47H512M8WTR-3:C belongs to the category of semiconductor memory products.

Use

This product is primarily used as a dynamic random-access memory (DRAM) module in various electronic devices and systems.

Characteristics

• High-speed data transfer capabilities
• Large storage capacity
• Low power consumption
• Compact form factor
• Reliable performance

Package

MT47H512M8WTR-3:C is available in a small outline, thin profile (TSOP) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval for electronic devices.

Packaging/Quantity

MT47H512M8WTR-3:C is typically packaged in reels and comes in quantities of 250 or 500 units per reel.

Specifications

• Memory Type: Dynamic Random-Access Memory (DRAM)
• Capacity: 512 Megabits (64 Megabytes)
• Organization: 64M x 8 bits
• Operating Voltage: 1.8V
• Speed Grade: DDR3-1066 (PC3-8500)
• Refresh Mode: Auto-refresh and self-refresh
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT47H512M8WTR-3:C is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. VSS
44. CK
45. CKE
46. CS#
47. DM0
48. DM1
49. VSS
50. VDD

Functional Features

• High-speed data transfer rate
• Low latency
• On-die termination (ODT) for improved signal integrity
• Burst mode operation for efficient data access
• Auto and self-refresh modes for power-saving
• Error correction code (ECC) support for data integrity

Advantages and Disadvantages

Advantages

• Fast data transfer rate enhances overall system performance.
• Large storage capacity allows for the handling of extensive data.
• Low power consumption helps conserve energy.
• Compact form factor enables integration into space-constrained devices.
• Reliable performance ensures data integrity.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited scalability beyond a certain capacity.
• Sensitive to electrical noise and interference.

Working Principles

MT47H512M8WTR-3:C operates based on the principles of dynamic random-access memory. It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. The memory controller sends commands and addresses to access specific data stored in the memory cells.

Detailed Application Field Plans

MT47H512M8WTR-3:C finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Consumer electronics (e.g., televisions, gaming consoles) - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT47H512M8WTR-3:C are: - MT47H256M8EB-25E:C - MT47H128M16RT-25E:C - MT47H64M16HR-25E:C - MT47H32M16BN-25E:C - MT47H16M16BG-25E:C

These alternative models offer similar functionality and characteristics, but with varying capacities and configurations.

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