MT47H64M8CB-25:B TR

Product Overview

Category

MT47H64M8CB-25:B TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, laptops, servers, and mobile phones for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact size
• Wide temperature range operation
• Reliable performance

Package

MT47H64M8CB-25:B TR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval in various electronic devices.

Packaging/Quantity

MT47H64M8CB-25:B TR is typically packaged in trays or reels and is available in different quantities depending on customer requirements.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 512 Megabytes (MB)
• Organization: 64 Megabits x 8
• Speed: 25 nanoseconds (ns)
• Voltage: 1.5 Volts (V)
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT47H64M8CB-25:B TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. NC
12. A0
13. A1
14. A2
15. A3
16. A4
17. A5
18. A6
19. A7
20. VSS
21. A8
22. A9
23. A10
24. A11
25. A12
26. A13
27. A14
28. A15
29. VSS
30. BA0
31. BA1
32. RAS#
33. CAS#
34. WE#
35. CK
36. CKE
37. CS#
38. DQS0
39. DQS1
40. DM0
41. DM1
42. VSS
43. VDD

Functional Features

• High-speed data transfer rate
• Burst mode operation
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity
• Programmable read and write latency
• Internal calibration for optimal performance

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Low power consumption
• Compact size for space-constrained devices
• Wide temperature range operation for versatile applications
• Reliable performance for critical systems

Disadvantages

• Limited capacity compared to higher-end memory modules
• Requires compatible hardware for proper functioning

Working Principles

MT47H64M8CB-25:B TR operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain the stored information. The memory controller sends commands to read from or write to specific memory locations, allowing for efficient data storage and retrieval.

Detailed Application Field Plans

MT47H64M8CB-25:B TR is widely used in various electronic devices that require fast and reliable data storage and retrieval. Some common application fields include:

1. Personal computers and laptops
2. Servers and data centers
3. Mobile phones and tablets
4. Networking equipment
5. Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT47H64M8CB-25:B TR include:

1. MT47H128M8BT-25E: Higher capacity variant with 1 Gigabyte (GB) capacity.
2. MT47H32M16HR-25E: Higher density variant with 512 Megabits x 16 organization.
3. MT47H64M16HR-25E: Higher density variant with 1 Gigabit x 16 organization.

These alternative models provide options for different memory capacities and organizations, allowing for flexibility in design and application requirements.

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