MT48LC16M16A2B4-7E:G TR

Product Overview

Category

The MT48LC16M16A2B4-7E:G TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is commonly used in various electronic devices and systems that require high-speed data storage and retrieval capabilities.

Characteristics

• High-density storage capacity
• Fast data access and transfer rates
• Low power consumption
• Compact package size
• Wide operating temperature range

Package

The MT48LC16M16A2B4-7E:G TR is typically packaged in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently, making it an essential component in modern electronic devices.

Packaging/Quantity

The MT48LC16M16A2B4-7E:G TR is usually supplied in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 16 Meg x 16
• Voltage Supply: 3.3V
• Speed: 7ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Package Type: SOIC
• Pin Count: 48

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /OE
38. /CS0
39. /CS1
40. /CS2
41. /CS3
42. VSS
43. VSS
44. VSS
45. VSS
46. VSS
47. VSS
48. VDDQ

Functional Features

• High-speed data access and transfer
• Burst mode operation for efficient data retrieval
• Auto-refresh capability to maintain data integrity
• Low power consumption in standby mode
• On-chip error correction code (ECC) for improved reliability
• Multiple chip enable signals for flexible memory organization

Advantages and Disadvantages

Advantages

• High-density storage capacity allows for large amounts of data to be stored.
• Fast data access and transfer rates enable quick processing and response times.
• Low power consumption helps conserve energy and extend battery life in portable devices.
• On-chip ECC enhances data integrity and reduces the risk of errors.

Disadvantages

• Relatively higher cost compared to other types of memory technologies.
• Limited scalability beyond a certain density due to physical limitations.
• Sensitive to electrical noise and requires careful design considerations for optimal performance.

Working Principles

The MT48LC16M16A2B4-7E:G TR operates based on the principles of dynamic random access memory. It utilizes a capacitor-based storage cell to store each bit of data. The stored information needs to be periodically refreshed to maintain its integrity. When a read or write operation is initiated, the memory controller sends appropriate signals to the chip, enabling the transfer of data between the memory and the processor.

Detailed Application Field Plans

The MT48LC16M16A2B4-7E:G TR finds applications in various electronic systems, including but not limited to: - Personal computers - Servers - Networking equipment - Mobile devices - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. MT48LC32M16A2P-75:C
2. MT48LC64M16A2P-75:C
3. MT48LC128M16A2P-75:C
4. MT48LC256M16A2P-75:C
5. MT48LC512M16A2P-75:C

These alternative models offer similar functionality and characteristics, but with varying storage capacities.