MT48LC16M4A2TG-75:G TR

Product Overview

Category

The MT48LC16M4A2TG-75:G TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, servers, and networking equipment for storing and accessing data during operation.

Characteristics

• High-speed data access: The MT48LC16M4A2TG-75:G TR offers fast read and write operations, allowing for efficient data processing.
• Large storage capacity: With a capacity of 16 megabits (2 megabytes), this DRAM chip can store a significant amount of data.
• Low power consumption: It is designed to operate with low power requirements, making it suitable for energy-efficient devices.
• Compact package: The chip is packaged in a small form factor, enabling easy integration into various electronic systems.

Package and Quantity

The MT48LC16M4A2TG-75:G TR is typically available in surface mount packages, such as TSOP (Thin Small Outline Package) or BGA (Ball Grid Array). The quantity may vary depending on the supplier or customer requirements.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 16 Megabits x 4
• Operating Voltage: 3.3V
• Speed Grade: 75 ns
• Interface: Parallel
• Package Type: TSOP or BGA
• Temperature Range: Commercial (0°C to 70°C)

Detailed Pin Configuration

The MT48LC16M4A2TG-75:G TR has a total of 54 pins. Here is a detailed pin configuration:

1. VDD - Power supply voltage
2. VSS - Ground
3. A0-A11 - Address inputs
4. BA0-BA1 - Bank address inputs
5. DQ0-DQ15 - Data input/output lines
6. WE - Write enable
7. CAS - Column address strobe
8. RAS - Row address strobe
9. CS - Chip select
10. CLK - Clock input

(Note: The above list is not exhaustive and includes only the key pins.)

Functional Features

• Fast Access Time: The MT48LC16M4A2TG-75:G TR offers a quick access time, allowing for efficient data retrieval and storage.
• Refresh Capability: It supports automatic refresh cycles to maintain data integrity over extended periods of use.
• Burst Mode Operation: This DRAM chip supports burst mode, enabling rapid consecutive data transfers.
• Self-Refresh Mode: It has a self-refresh feature that allows the chip to conserve power when not actively accessed.

Advantages and Disadvantages

Advantages

• High-speed data access enables faster processing in electronic devices.
• Large storage capacity accommodates a significant amount of data.
• Low power consumption makes it suitable for energy-efficient systems.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• Limited temperature range (commercial grade) may restrict its use in extreme environments.
• Requires periodic refresh cycles to maintain data integrity.
• Sensitive to electrical noise and voltage fluctuations.

Working Principles

The MT48LC16M4A2TG-75:G TR operates based on the principles of dynamic random access memory. It stores data as charge in tiny capacitors within the memory cells. To read or write data, the chip activates specific rows and columns using row and column address strobes. The stored charge is sensed and amplified to retrieve the data or modify it.

Detailed Application Field Plans

The MT48LC16M4A2TG-75:G TR finds applications in various electronic devices, including: - Personal computers - Servers - Networking equipment - Embedded systems - Consumer electronics

Its high-speed data access, large storage capacity, and low power consumption make it suitable for these applications, where efficient data processing and storage are crucial.

Detailed and Complete Alternative Models

Some alternative models to the MT48LC16M4A2TG-75:G TR include: - MT48LC32M4A2TG-75:G TR - MT48LC64M4A2TG-75:G TR - MT48LC128M4A2TG-75:G TR

These models offer similar characteristics and specifications but differ in terms of storage capacity. The choice of alternative model depends on the specific requirements of the application.

(Note: This list is not exhaustive and may vary based on availability and technological advancements.)

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