MT48LC64M4A2P-7E:G

Product Overview

Category

The MT48LC64M4A2P-7E:G belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is commonly used in electronic devices such as computers, servers, and networking equipment for storing and accessing data quickly.

Characteristics

• High-speed operation: The MT48LC64M4A2P-7E:G offers fast data transfer rates, allowing for efficient processing of large amounts of information.
• Large storage capacity: With a capacity of 64 megabits (8 megabytes), this DRAM chip provides ample space for data storage.
• Low power consumption: The chip is designed to consume minimal power, making it suitable for energy-efficient devices.
• Compact package: The MT48LC64M4A2P-7E:G is available in a small form factor package, enabling its integration into various electronic systems.

Packaging/Quantity

This product is typically packaged in trays or reels, with each containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 64 Megabits x 4
• Operating Voltage: 3.3V
• Speed Grade: 7E
• Package Type: Plastic TSOP II
• Temperature Range: Commercial (0°C to +70°C)
• RoHS Compliance: Yes

Detailed Pin Configuration

The MT48LC64M4A2P-7E:G features a total of 54 pins, which are assigned specific functions for proper operation. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. VSS
7. DQ4
8. DQ5
9. DQ6
10. DQ7
11. VSS
12. DQ8
13. DQ9
14. DQ10
15. DQ11
16. VSS
17. DQ12
18. DQ13
19. DQ14
20. DQ15
21. VSS
22. DQM0
23. DQM1
24. WE#
25. CAS#
26. RAS#
27. A0
28. A1
29. A2
30. A3
31. A4
32. A5
33. A6
34. A7
35. A8
36. A9
37. A10
38. A11
39. A12
40. A13
41. A14
42. A15
43. A16
44. A17
45. A18
46. A19
47. A20
48. A21
49. A22
50. A23
51. VDD
52. VSS
53. CLK
54. CKE

Functional Features

The MT48LC64M4A2P-7E:G offers the following functional features:

• Random Access: The chip allows for random access to any location within its memory array, enabling efficient data retrieval.
• Burst Mode: It supports burst mode operation, allowing for consecutive data transfers without the need for repeated address input.
• Refresh Capability: The DRAM chip incorporates an internal refresh mechanism to maintain data integrity over time.
• Low Latency: With fast access times, this product minimizes delays in retrieving and storing data.

Advantages and Disadvantages

Advantages

• High-speed operation enables efficient data processing.
• Large storage capacity accommodates substantial amounts of data.
• Low power consumption contributes to energy efficiency.
• Compact package facilitates integration into various electronic systems.

Disadvantages

• Requires periodic refresh cycles to maintain data integrity.
• Sensitive to external factors such as temperature and voltage fluctuations.
• Relatively higher cost compared to other memory technologies.

Working Principles

The MT48LC64M4A2P-7E:G operates based on the principles of dynamic random access memory. It stores data in capacitors within its memory cells, which need to be periodically refreshed to retain their charge. When a specific memory location is accessed, the chip activates the necessary circuitry to read or write data from/to the corresponding capacitor.

Detailed Application Field Plans

The MT48LC64M4A2P-7E:G finds applications in various fields, including:

1. Personal Computers: Used for main memory in desktops and laptops.
2. Servers: Employed as primary memory in server systems for efficient data handling.
3. Networking Equipment: Integrated into routers, switches, and network