PC28F640P33BF60A

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-density storage capacity
  • Fast read and write speeds
  • Reliable and durable
• Package: BGA (Ball Grid Array)
• Essence: Provides high-performance data storage solution for various electronic devices
• Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

• Memory Type: NAND Flash
• Density: 64 gigabits (8 gigabytes)
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Page Size: 2KB
• Block Size: 128 pages
• Read/Write Speed: Up to 50MB/s
• Endurance: 100,000 program/erase cycles
• Data Retention: Up to 10 years

Pin Configuration

The PC28F640P33BF60A has a total of 48 pins arranged as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. RE#
45. WP#
46. RY/BY#
47. CLE#
48. ALE#

Functional Features

• High-speed data transfer for efficient read and write operations
• Error correction and detection mechanisms for data integrity
• Wear-leveling algorithms to distribute data evenly across memory cells
• Power-saving features to optimize energy consumption
• Support for various command sets and protocols
• Advanced security features to protect stored data

Advantages

• Large storage capacity allows for extensive data storage
• Fast read and write speeds enhance overall system performance
• Reliable and durable, ensuring long-term data retention
• Low power consumption for energy-efficient operation
• Versatile compatibility with different electronic devices
• Enhanced security features protect sensitive information

Disadvantages

• Higher cost compared to other types of memory
• Limited endurance due to program/erase cycles
• Requires additional circuitry for interfacing with the host device

Working Principles

The PC28F640P33BF60A utilizes NAND flash memory technology to store and retrieve data. It consists of a grid of memory cells that can be electrically programmed and erased. The memory cells are organized into pages and blocks, allowing for efficient read and write operations. When data is written, it is stored in the memory cells by applying appropriate voltage levels. Reading data involves sensing the voltage levels in the memory cells and converting them back into digital information.

Detailed Application Field Plans

The PC28F640P33BF60A is widely used in various electronic devices, including:

1. Solid-state drives (SSDs)
2. USB flash drives
3. Memory cards
4. Embedded systems
5. Industrial control systems
6. Automotive electronics
7. Consumer electronics

Detailed and Complete Alternative Models

1. PC28F640P33BFE60A
2. PC28F640P33BFD60A
3. PC28F640P33BFF60A
4. PC28F640P33BFG60A
5. PC28F640P33BFS60A

These alternative models offer similar specifications and functionality to the PC28F640P33BF60A, providing customers with options based on their specific requirements.

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